Disclosed herein are terpolymers that can function as pressure-sensitive adhesives. The disclosed articles comprise the terpolymers adhered to a release liner. The disclosed implant devices comprise the pressure-sensitive adhesive terpolymer adhered to a surface thereof. The pressure-sensitive adhesive terpolymer can promote adhesion of the implant device to a location in a subject.

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densitiese.g., a dislocation density below 10.sup.4 cm.sup.2 and an inclusion density below 10.sup.4 cm.sup.3 and/or a MV density below 10.sup.4 cm.sup.3.

The invention relates to a dental mill blank comprising a pre-sintered porous zirconia material, the porous pre-sintered zirconia material showing a N2 adsorption of isotherm type IV according to IUPAC classification, the porous pre-sintered zirconia material having a Vickers hardness from about 25 to about 150, the dental mill blank comprising means for reversible attaching it to a machining device. The invention also relates to a process of producing a zirconia dental article comprising the steps of providing a dental mill blank comprising a porous pre-sintered zirconia material, placing the dental mill blank in a machining device, machining the porous zirconia material and to a dental article obtained by such a process.

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed.

A non-polished glass wafer, a thinning system, and a method for using the non-polished glass wafer to thin a semiconductor wafer are described herein. In one embodiment, the glass wafer has a body (e.g., circular body) including a non-polished first surface and a non-polished second surface substantially parallel to each other. In addition, the circular body has a wafer quality index which is equal to a total thickness variation in micrometers plus one-tenth of a warp in micrometers that is less than 6.0.

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Provided herein is a resin-metal complex and a manufacturing method thereof, the resin-metal complex being a synthetic resin comprising an olefin resin, filler, and coupling agent combined with a metallic material, the filler being at least one of an organic filler and inorganic filler, the inorganic filler being wood flour, wood pellet, wood fiber, or paper powder, and the inorganic filler being talc, calcium carbonate, wollastonite, or kaolinite.

The present invention relates inter alia to an array comprising i times j array elements, wherein the array elements may comprise at least one quantum dot and/or at least one photoluminescent compound. Further the present invention relates to devices comprising these arrays. The arrays and devices can be used to generate white light with high color purity.

A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): B.sup.k.sub.k-1<=cos.sup.1(sin(2.3 degrees)/sin C.sub.k), formula (b): B.sup.k.sub.k<=cos.sup.1(sin(2.3 degrees)/sin C.sub.k), and formula (c): min(C.sub.k)<=20 degrees. In the formulas, C.sub.k is an offset angle of a k-th plane, B.sup.k.sub.k-1 is an angle defined by an offset downstream direction of the k-th plane and a (k1)-th ridge line, and B.sup.k.sub.k is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.