The present disclosure relates to large cell sheets, solar cells, shingled solar modules, and manufacturing method thereof. A top surface of a boundary portion of units of the large cell sheet is divided into a cutting area, top surface bonding areas and top surface electrically-conductive contact areas. The cutting area is configured in a way that the large cell sheet can be cut along the cutting area; the top surface bonding areas and the top surface electrically-conductive contact areas are provided alternately, the cutting area and the top surface electrically-conductive contact areas are formed as an overlapping edge of the solar cell, and after the splitting of the large cell sheet, the top surface electrically-conductive contact areas can directly contact the bottom surface of another solar cell to achieve electrically-conductive connection. The large cell sheet according to the present disclosure can be split conveniently, and the individual solar cells are provided with dedicated bonding areas and electrically-conductive contact areas. Such an arrangement can optimize the production process and use performance of the solar cells.

Described herein is a photovoltaic module, which includes PV cells capable of converting light incoming from a front side and from a rear side (3) and a transparent rear side including a rear surface carrying a structured layer (9), where the lower surface of the structured layer (9) is the lower surface of the module, and where the surface of layer (9) is structured by parallel V-shaped grooves of depth h2 or less than h2, where the lateral faces of the grooves of depth less than h2 form a groove angle beta and adjacent faces of neighbouring grooves form a peak of apex angle alpha, characterized in that h2 is from the range 5 to 200 micrometer, and each pair of neighbouring grooves includes one groove of depth h2 and one groove of depth (h2−h1), where h1 ranges from 0.1 h2 to 0.9 h2.

Discussed is a solar cell including a semiconductor substrate, a conductive region disposed in the semiconductor substrate or over the semiconductor substrate, and an electrode electrically connected to the conductive region. The electrode includes a first electrode part and a second electrode part disposed over the first electrode part. The second electrode part includes a particle connection layer formed by connecting a plurality of particles including a first metal and a cover layer including a second metal different from the first metal and covering at least the outside surface of the particle connection layer.

Methods of fabricating solar cells having a plurality of sub-cells coupled by cell level interconnection, and the resulting solar cells, are described herein. In an example, a solar cell includes a plurality of sub-cells. Each of the plurality of sub-cells includes a singulated and physically separated semiconductor substrate portion. Each of the plurality of sub-cells includes an on-sub-cell metallization structure interconnecting emitter regions of the sub-cell. An inter-sub-cell metallization structure couples adjacent ones of the plurality of sub-cells. The inter-sub-cell metallization structure is different in composition from the on-sub-cell metallization structure.

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A solar cell system and a flexible solar panel are disclosed herein. The solar cell system includes a glass housing, a set of rows of solar cells each defining a front side and a rear side and arranged within the glass housing. The solar cell system can also include a reflective element disposed in the glass housing and facing the rear side of the set of rows of solar cells and a first terminal coupled to a first end of the set of rows of solar cells, traversing through and sealed against the first end of the glass housing. The solar cell system can be configured with other solar cell systems into the flexible solar panel that is deployable in a wide range of potential applications.

The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance. This object is achieved by first providing the silicon solar cell with the emitter layer, the contact grid and a rear contact, and electrically connecting the contact grid to one pole of a voltage source, then a contacting device that is electrically connected to the other pole of the voltage source is connected to the rear contact, and with the voltage source, a voltage is applied directed contrary to the forward direction of the silicon solar cell that is less than the breakdown voltage of the silicon solar cell and, when applying this voltage, a point light source is guided over the sun-facing side of the silicon solar cell and thereby a section of a subsection of the sun-facing side is illuminated and thus a current flow is induced in the subsection where the current flow relative to the section has a current density of 200 A/cm.sup.2 to 20,000 A/cm.sup.2 and acts on the subsection for 10 ns to 10 ms.

Provided is a solar cell, including: an N-type semiconductor substrate having a front surface and a rear surface opposite to the front surface; a boron diffusion layer arranged on the front surface of the N-type semiconductor substrate, a first passivation layer is provided on a surface of the boron diffusion layer, and a first electrode is provided passing through the first passivation layer to form an electrical connection with the N-type semiconductor substrate; and a phosphorus-doped polysilicon layer arranged on the rear surface of the N-type semiconductor substrate. A silicon oxide layer containing nitrogen and phosphorus is provided between the rear surface of the N-type semiconductor substrate and the phosphorus-doped polysilicon layer, a second passivation layer is provided on a surface of the phosphorus-doped polysilicon layer, and a second electrode is provided passing through the second passivation layer to form an electrical connection with the phosphorus-doped polysilicon layer.

Embodiments of the present disclosure provide a photovoltaic cell, a method for manufacturing the photovoltaic cell, and a photovoltaic module. The photovoltaic cell includes a substrate, and an emitter and a first passivation structure that are located on a first surface of the substrate, where the emitter is located between the substrate and the first passivation structure; a first electrode, penetrating through the first passivation structure and being in contact with the emitter; and a first eutectic, located between the first electrode and the emitter, where the first eutectic includes a material of the first electrode and a material of the emitter, and a part of the first electrode penetrates through the first eutectic and is in contact with the emitter.