Patent classifications
Y10S977/762
ADAPTIVE SOLID-STATE LUMINESCENT PHOSPHORS
The absorbance or emission wavelength of composite materials comprising a transition metal doped shell disposed over a rare earth doped core and a functionalizable group on the surface of the transition metal doped shell can change upon subjection to a carboxylic acid. This method of changing the absorbance or emission wavelength of a composite material can be used to identify counterfeit currency using an ink comprising a composite material.
SYSTEM AND METHODS FOR FABRICATING BORON NITRIDE NANOSTRUCTURES
This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
PROCESS FOR FABRICATING SILICON NANOSTRUCTURES
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
ELECTRONIC DEVICE
A device includes an upper metallic layer, a lower layer, and a memory array positioned between the upper and lower layers, wherein the memory electrical characteristic changes when storing data.
METHOD FOR PRODUCING SILVER NANOWIRES, SILVER NANOWIRES, DISPERSION, AND TRANSPARENT CONDUCTIVE FILM
In order to provide a method for producing silver nanowires in which a local maximum of optical absorption in the plasmon absorption band can be shifted toward the short wavelength side without making the wire diameter smaller, a method for producing silver nanowires includes a step of heating a mixed liquid of a dispersion of silver nanowires and metal ions of a transition metal that is different from silver, and reducing the metal ions, thereby intermittently precipitating clumps of the transition metal on a surface of the silver nanowires. The thus produced silver nanowires have metal clumps intermittently along the length direction, and a local maximum of optical absorption in the plasmon absorption band of the silver nanowires has been shifted toward the short wavelength side.
Nano sensor
A device includes an upper metallic layer, a lower layer, and a nano sensor array positioned between the upper and lower layers to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object.
Methods of forming nano-scale and micro-scale structured materials and materials formed thereby
Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.
Semiconductor package structure with twinned copper
A semiconductor package structure is provided. The semiconductor package structure includes a chip structure. The semiconductor package structure includes a first conductive structure over the chip structure. The first conductive structure is electrically connected to the chip structure. The first conductive structure includes a first transition layer over the chip structure; a first conductive layer on the first transition layer; and a second conductive layer over the first conductive layer. The first conductive layer is substantially made of twinned copper. A first average roughness of a first top surface of the second conductive layer is less than a second average roughness of a second top surface of the first conductive layer.
Nanowire catalysts and methods for their use and preparation
Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons. Related methods for use and manufacture of the same are also disclosed.
SEMICONDUCTOR DEVICE
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.