Patent classifications
Y10S977/813
LIGHT-EMITTING LAYER FOR PEROVSKITE LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND PEROVSKITE LIGHT-EMITTING DEVICE USING SAME
Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.
Method for manufacturing quantum dot color filter
The present invention provides a method for manufacturing a quantum dot color filter, which uses a printing mold to pick up quantum dots and printing the quantum dots into a partially cured photoresist layer and then separates the quantum dots and the printing mold, followed by irradiation of UV light to completely cure the photoresist layer so that the quantum dots may uniformly distributed in the photoresist layer. This simplifies the process of transferring a quantum dot layer and reduces cost; requires no process of forming a sacrifice layer and no step of dissolving the sacrifice layer to prevent damage to the quantum dot layer; allows the quantum dots to be uniformly distributed in the photoresist layer to thereby improve the utilization of the quantum dots; and allows a quantum dot color filter so manufactured to be used with white backlighting or blue backlighting for achieving displaying of three primary colors of red, green, and blue.
Semiconducting particles in electronic elements
The present invention relates inter alia to a color display comprising nanoparticles and color filters.
SEMICONDUCTOR NANOPARTICLES AND METHOD OF PRODUCING SEMICONDUCTOR NANOPARTICLES
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M.sup.1 in a solvent at a temperature set in a range of 100 C. to 300 C. The primary semiconductor nanoparticles contain the element M.sup.1, an element M.sup.2, optionally an element M.sup.3, and an element Z, and have an average particle size of 50 nm or less. The element M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M.sup.2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M.sup.3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
METHOD FOR FABRICATING QUANTUM DOT LIGHT EMITTING DIODES (LEDs) WITH SUPPRESSED PHOTOBRIGHTING
A device and associated method are provided for a light emitting diode device (LED) with suppressed quantum dot (QD) photobrightening. The QD surfaces, with a maximum cross-sectional dimension of 10 nanometers, are treated with a solution including a multi-valent cation salt. In response to heating the solution, multi-valent cations become attached to the surface of the QD nanocrystals, forming treated QDs that are deposited overlying a top surface of an LED. The LED device emits a non-varying intensity of first wavelength light in the visible spectrum from the treated QDs, when subjected to a continuous exposure of a second wavelength of LED light having an intensity of greater than 50 watts per square centimeter. For example, blue, green, or red color light may be emitted when exposed to LED light in the ultraviolet (UV) spectrum, or a green or red color light when exposed to a blue color LED light.
Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same
Disclosed are a light-emitting layer for a perovskite light-emitting device, a method for manufacturing the same, and a perovskite light-emitting device using the same. The method of manufacturing the light-emitting layer comprises a step of forming a first nanoparticle thin film by coating, on a substrate for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined, and has a lamella structure in which an organic plane and an inorganic plane are alternatively stacked. Also, high color purity is realized because excitons are confined to the inorganic plane.
Quantum dot light emitting diode (LED) with suppressed photobrightening
A device and associated method are provided for a light emitting diode device (LED) with suppressed quantum dot (QD) photobrightening. The QD surfaces, with a maximum cross-sectional dimension of 10 nanometers, are treated with a solution including a multi-valent cation salt. In response to heating the solution, multi-valent cations become attached to the surface of the QD nanocrystals, forming treated QDs that are deposited overlying a top surface of an LED. The LED device emits a non-varying intensity of first wavelength light in the visible spectrum from the treated QDs, when subjected to a continuous exposure of a second wavelength of LED light having an intensity of greater than 50 watts per square centimeter. For example, blue, green, or red color light may be emitted when exposed to LED light in the ultraviolet (UV) spectrum, or a green or red color light when exposed to a blue color LED light.
Semiconductor nanoparticles and method of producing semiconductor nanoparticles
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M.sup.1 in a solvent at a temperature set in a range of 100 C. to 300 C. The primary semiconductor nanoparticles contain the element M.sup.1, an element M.sup.2, optionally an element M.sup.3, and an element Z, and have an average particle size of 50 nm or less. The element M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M.sup.2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M.sup.3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
Semiconducting particles in electronic elements
The present invention relates inter alia to a color display comprising nanoparticles and color filters.
Photoluminescent engine indicium
A vehicle engine is provided that includes an exhaust manifold configured to emit a first emission. A heat shield is positioned proximate the exhaust manifold and has a shield substrate defining an aperture. An indicator is positioned over the aperture with a support substrate and a semiconductor layer. The semiconductor layer is configured to absorb the first emission and emit a second emission.