Organosilane functionalised carbon nanoparticles comprising a carbon dot bonded to an organosilane functionalization agent in a first orientation having one or more functional groups capable of binding mercury located at or proximal to a free end thereof.

The present invention provides a method for manufacturing an OLED device and an OLED device manufactured therewith. The method for manufacturing an OLED device includes: (1) providing a substrate and forming, in sequence, an anode and a hole transporting layer on the substrate; (2) forming an emissive layer on the hole transporting layer through a solution film casting process, wherein the emissive layer comprises a red sub-pixel, a green sub-pixel, and a blue sub-pixel, of which at least one sub-pixel is formed of a quantum dot and at least one sub-pixel is formed of an organic light-emitting material; (3) forming, in sequence, an electron transporting layer and a cathode on the emissive layer; and (4) providing a package cover plate, which is set above the cathode, wherein the substrate and the package cover plate are bonded together by sealing enclosing resin to complete packaging of the OLED device. Since each sub-pixel of the emissive layer is formed through a solution film casting process, the manufacture of the OLED device requires no use of a fine metal mask so that the manufacturing cost is low, the utilization rate of material is high, and the yield rate is good.

An electronic device for implementing digital functions comprising a first and a second electrode regions, separated by an interposing region comprising a dielectric region, is described. The first and the second electrode regions comprise at least one first electrode and at least one second electrode, respectively, configured to generate in the interposing region an electric field depending on an electric potential difference applied thereto. In the interposing region, a molecular layer is comprised, which is composed of a plurality of molecules, each being capable of assuming one or more states, in a controllable manner, depending on a sensed electric field. The dielectric region has a spatially variable dielectric profile, to determine a respective spatially variable field profile of the sensed electric field at the molecular layer.

The present invention provides a structure of a white OLED device that includes a plurality of emissive layers, of which at least one emissive layer is made of a quantum dot and at least one emissive layer is made of an organic light emission material so as to combine the advantages of the quantum dot and the organic light emission material, where the manufacturing cost is low, the utilization of material is high, and the light emission efficiency is high thereby increasing the brightness of a display device and providing excellent performance for use in flat panel display devices, televisions, and other fields of display.

Squared-off semiconductor coatings for quantum dots (QDs) and the resulting quantum dot materials are described. In an example, a semiconductor structure includes a quantum dot structure having an outermost surface. A crystalline semiconductor coating is disposed on and completely surrounds the outermost surface of the quantum dot structure. The crystalline semiconductor coating has a geometry with squared-off ends.

An apparatus is described that selectively absorbs electromagnetic radiation. The apparatus includes a conducting surface, a dielectric layer formed on the conducting surface, and a plurality of conducting particles distributed on the dielectric layer. The dielectric layer can be formed from a material and a thickness selected to yield a specific absorption spectrum. Alternatively, the thickness or dielectric value of the material can change in response to an external stimulus, thereby changing the absorption spectrum.

Techniques for forming nanostructured materials are provided. In one aspect of the invention, a method for forming nanotubes on a buried insulator includes the steps of: forming one or more fins in a SOI layer of an SOI wafer, wherein the SOI wafer has a substrate separated from the SOI layer by the buried insulator; forming a SiGe layer on the fins; annealing the SiGe layer under conditions sufficient to drive-in Ge from the SiGe layer into the fins and form a SiGe shell completely surrounding each of the fins; and removing the fins selective to the SiGe shell, wherein the SiGe shell which remains forms the nanotubes on the buried insulator. A nanotube structure and method of forming a nanotube device are also provided.

Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described. One or more embodiments of the present invention are directed at approaches for varying the gate width of a transistor structure comprising a nanowire stack having a distinct number of nanowires. The approaches include rendering a certain number of nanowires inactive (i.e. so that current does not flow through the nanowire), by severing the channel region, burying the source and drain regions, or both. Overall, the gate width of nanowire-based structures having a plurality of nanowires may be varied by rendering a certain number of nanowires inactive, while maintaining other nanowires as active.

A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.

A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.