The invention relates to a self-passivating quantum dot and a preparation method thereof. The quantum dot is doped with a self-passivating element M and the self-passivating element M ranges from 0.1 wt % to 40 wt % in content. The self-passivating element is selected from the group consisting of Al, Zr, Fe, Ti, Cr, Ta, Si, and Ni. The preparation method comprises the steps of: adding a quantum dot core and a solvent into a reaction vessel, controlling the temperature to be 100-120 DEG C. and vacuumizing the reaction vessel for 30-50 min; filling the reaction vessel with inert gas, and rising the temperature to 230-280 DEG C.; and injecting a coating material precursor solution into the reaction vessel for coating the quantum dot core according to the injection amount being 1 or 2 times by molar concentration of the quantum dot core element per hour to prepare the self-passivating quantum dot. The self-passivating element M is doped with the quantum dot core precursor solution in the form of an M precursor, or is doped with the coating material precursor solution. Compared with the prior art, the self-passivating quantum dot has better appearance and is significantly improved in photostability.

An LED driving device includes a converter module configured to receive an input voltage and generate an output voltage for driving a plurality of LEDs. A surge protection module is electrically connected to the converter module. A case holds the converter module and the surge protection module, and provides electrical coupling therebetween.

A display device includes: a display substrate; a light amount control layer on the display substrate; a first polarizer on the light amount control layer; and a color conversion layer on the first polarizer. The color conversion layer includes a phosphor, the phosphor includes a quantum dot, the quantum dot including: a core; a first shell surrounding the core; and a second shell surrounding the first shell, and the quantum dot has a diameter ranging from about 2 nm to about 32 nm.

The present invention includes formulations for use in preparing an optical material, optical materials, optical components and other products including optical materials, products including optical components, methods for improving various performance aspects of an optical material and optical components, and methods for purifying aliphatic methacrylate monomers and aliphatic dimethacrylates.

In one aspect a light emitting device includes a light emitting diode (LED) chip, and an encapsulant covering the LED chip. The encapsulant is embedded with a downconverter. The downconverter includes a quasi-two dimensional quantum nanoplatelet structure.

Provided is a process for producing a wavelength conversion member which can suppress the reaction between inorganic nanophosphor particles and glass to suppress the deterioration of the inorganic nanophosphor particles, and the wavelength conversion member. The process for producing a wavelength conversion member includes the steps of: preparing inorganic nanophosphor particles 1 with an organic protective film formed on respective surfaces thereof; and mixing the inorganic nanophosphor particles 1 with glass powder and firing a resultant mixture in a temperature range where the organic protective films remain as retained films 3.

A display device includes a pixel electrode, a pixel isolation insulating film in which an opening through which the pixel electrode is exposed at a bottom is formed, and a light-emitting layer formed inside the opening. The pixel isolation insulating film contains particles that receive light emitted from the light-emitting layer and propagate light in a direction different from that of the light emitted from the light-emitting layer.

The present invention provides a method for manufacturing a quantum dot polarization plate. The method for manufacturing a quantum dot polarization plate according to the present invention forms a quantum dot layer and a polarization layer separately on different bases to respectively make a quantum dot film and a polarization film and then bonds the quantum dot film and the polarization film together to form a quantum dot polarization plate. The quantum dot polarization plate is not made through successive formations of films on the same base so that the quantum dot layer of the quantum dot polarization plate can be manufactured through a high-temperature process or a low-temperature process, thereby expanding the range of material section and manufacture for quantum dots. The quantum dot polarization plate manufactured with such process helps increase color gamut coverage of the display panel, but does not cause elimination of light polarization.

Techniques and mechanisms for synthesizing quantum dot structures. In an embodiment, a first reaction is performed to dissolve a precursor of a semiconductor material, wherein water is created as a by-product of the first reaction. Some or all of the water is removed and another chemical compound is added, wherein the chemical compound is a primary alcohol or a 1,2-diol. After the addition of the chemical compound, a second reaction is performed to grow at least some nanocrystalline portion of the quantum dot. In another embodiment, the chemical compound is 1,2-hexanediol, 1,2-dodecanediol or 1-octadecanol.

Disclosed herein are embodiments of a coated type-I quantum dot comprising a core and a shell, and a silica layer, and a method for making the quantum dot. The quantum dot may be a thick-shelled quantum dot. Also disclosed are embodiments of a composition comprising one or more coated quantum dots and a polymer. The composition may be a luminescent solar concentrator. Device comprising the composition are disclosed. The device may comprise the composition, such as a luminescent solar concentrator, applied to a substrate, such as glass. The device may be a window or a solar module. Also disclosed is a method of applying the composition to the substrate to form a thin film luminescent solar concentrator.