The present invention relates generally to high current density access devices (ADs), and more particularly, to a structure and method of forming tunable voltage margin access diodes in phase change memory (PCM) blocks using layers of copper-containing mixed ionic-electronic conduction (MIEC) materials. Embodiments of the present invention may use layers MIEC material to form an access device that can supply high current-densities and operate reliably while being fabricated at temperatures that are compatible with standard BEOL processing. By varying the deposition technique and amount of MIEC material used, the voltage margin (i.e. the voltage at which the device turns on and the current is above the noise floor) of the access device may be tuned to specific operating conditions of different memory devices.

A magnetic storage medium is formed of magnetic nanoparticles that are encapsulated within nanotubes (e.g., carbon nanotubes).

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell. A fin structure is formed in the first region. The fin structure includes top and bottom fin portions and includes channel and non-channel regions defined along the length of the fin structure. An isolation layer is formed on the substrate. The isolation layer has a top isolation surface disposed below a top fin surface, leaving the top fin portion exposed. At least a portion of the exposed top fin portion in the channel region is processed to form a sharpened tip profile at top of the fin. A gate having a gate dielectric and a metal gate electrode is formed over the substrate. The gate wraps around the channel region of the fin structure.

Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of superconducting. A superconducting via may directly overlie a Josephson junction. A structure, for instance a Josephson junction, may be carried on a planarized dielectric layer. A fin may be employed to remove heat from the structure. A via capable of superconducting may have a width that is less than about 1 micrometer. The structure may be coupled to a resistor, for example by vias and/or a strap connector.

A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.

The present invention relates generally to high current density access devices (ADs), and more particularly, to a structure and method of forming tunable voltage margin access diodes in phase change memory (PCM) blocks using layers of copper-containing mixed ionic-electronic conduction (MIEC) materials. Embodiments of the present invention may use layers MIEC material to form an access device that can supply high current-densities and operate reliably while being fabricated at temperatures that are compatible with standard BEOL processing. By varying the deposition technique and amount of MIEC material used, the voltage margin (i.e. the voltage at which the device turns on and the current is above the noise floor) of the access device may be tuned to specific operating conditions of different memory devices.

A nanotube assembly including a nanotube layer, a first layer and a second layer. The nanotube layer comprises a vertically aligned nanotube array. The nanotube array includes a plurality of nanotubes. The first layer of a first conductive material is disposed on one surface of the nanotube layer. The second layer of a second conductive material is disposed on an opposite surface of the nanotube layer. The nanotube of the nanotube layer includes a first end against the first layer and a second end against the second layer. The resistance from the first end to the first layer is lower than a resistance from the second end to the second layer. One or more nano-particles are placed within the nanotube. At least one of the nano-particles is electrically charged, and can move along the nanotube under influence of an electric field.

An optically variable device uses a data storage layer with a nano-optical bit system to store data. The optically variable device encodes the data using spectral signatures (such as colors) as variables. In some embodiments, the optically variable device uses angle multiplexing to store machine-readable data and an image. The optically variable device can be used as a secure data storage medium for a large volume of data. The storage capacity can be increased by increasing the number of color variables and by introducing additional variables such as intensity and polarization.

A nanomagnetic structure and a method of fabricating a nanomagnetic structure. The nanomagnetic comprises two or more nanomagnetic material elements, each nanomagnetic material element having a respective predetermined geometric shape such that the nanomagnetic structure exhibits different stable ground states initializable by magnetic fields applied across the nanomagnetic structure in respective different directions; wherein the nanomagnetic material elements are disposed relative to each other such that the magnetic structure exhibits a difference in effective internal magnetic field strength between the different stable ground states. Advantageously, this variation in the internal magnetic field strength is the key for distinct dynamic response associated with the different magnetic ground states. Reconfigurable operation has been shown based on this magnetization dynamics in example embodiments.