A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of creating a switch, comprising disposing a switching element movably within an interior cavity of the switch to define switch-making and switch-breaking positions along a switching axis of the switching element, disposing a biasing element about the switching element to impart a biasing force to the switching element to place the switching element in one of the switch-making and switch-breaking positions until an external force imparted to the switching element exceeds the biasing force to cause the switching element to change to the other position, disposing a biasing force-adjusting element in cooperative engagement with the biasing element such that a magnitude of the biasing force is adjustable, and coupling a conductive contact to the switching element to define a switch-making state when the switching element is in the switch-making position and a switch-breaking state when the switching element is in the switch-breaking position.

A method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself, for the use in low, medium and high-voltage techniques, which may avoid a brazing foil, and/or overcome problems with the use of thin brazing foils, and/or to make the manufacture easier, but also more effective, wherein, on top of the Ni-layer will be placed an Ag-layer as a third layer, and then the metal part will be laid on top and connected by brazing or tempering.

In some embodiments, a method is provided that includes (1) providing aluminum; (2) providing carbon nanotube material; (3) combining the aluminum and carbon nanotube material to form a current-carrying, aluminum-carbon-nanotube component of an electrical switch device; and (4) assembling the electrical switch device using the aluminum-carbon-nanotube component. The aluminum-carbon-nanotube component is formed so as to have at least one of lower electrical resistivity and greater thermal conductivity than a component formed of aluminum without carbon nanotube material. Numerous other embodiments are provided.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

An RF switch to controllably withstand an applied RF voltage Vsw, or a method of fabricating such a switch, which includes a string of series-connected constituent FETs with a node of the string between each pair of adjacent FETs. The method includes controlling capacitances between different nodes of the string to effectively tune the string capacitively, which will reduce the variance in the RF switch voltage distributed across each constituent FET, thereby enhancing switch breakdown voltage. Capacitances are controlled, for example, by disposing capacitive features between nodes of the string, and/or by varying design parameters of different constituent FETs. For each node, a sum of products of each significant capacitor by a proportion of Vsw appearing across it may be controlled to approximately zero.

A method for producing a film composite for electrical connection inside a power electronic switching device has the steps: A) forming a film composite having an electrically insulating insulant film with a first and a second main face. A first electrically conductive metal film, forms conductor tracks insulated from one another on the first main face, and having a second electrically conductive metal film forming conductor tracks arranged insulated from one another on the second main face of the insulant film; B) folding the film composite on a fold line, so that a first contact face of a first conductor track lies on a first contact face of a second conductor track of the first main face, and a second contact face of this first conductor track of the first main face lies on a second contact face of the second conductor track of the first main.

A sensor electrode (SE) for a capacitive sensor device is designed such that the width of the sensor electrode decreases towards the center such that the capacity between the sensor electrode and an object (F) with constant distance between the sensor electrode and the object (F) substantially is equal in size for each position of the object (F) relative to the sensor electrode along a longitudinal axis of the sensor electrode. The sensor electrode may consist of a plurality of segments arranged in a strip with decreasing width towards the center of the electrode.