A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.

In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterised by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

A method for producing a component includes joining individual wall parts, especially for producing a melting crucible for use at a high operating temperature in a crucible-pulling method for quartz glass, wherein at least two wall parts of a refractory metal or of a base alloy of a refractory metal are provided, butt-joined to form a joint and joined together by sintering at a temperature above 1500 C. to form the component. A sealant is inserted into the joint to provide a component of improved tightness and to ensure improved sintering of the individual parts of the component. A component produced according to the method, particularly a melting crucible, particularly in a crucible pulling method for quartz glass, has the joint between the butt-joined walls closed in a gas-tight manner by a sealant.

A furnace and a method of growing a high temperature oxide crystal in the furnace. The furnace includes a crucible having a melt therein and a heating element for generating heat in the melt. A thermal element within the furnace produces a thermal gradient within the melt to draw a cold spot of a convection cell of the melt away from a seed location of the crucible. A seed crystal is drawn from the melt at the seed location to form a boule to grow the high temperature oxide crystal.

In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterized by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

The bulk polysilicon deposition rate of a Siemens method CVD reactor system having a power supply configured for deposition on a solid rod silicon filament of a specified diameter and length is increased by installing a high surface area silicon filament in the CVD reactor in lieu of the specified solid rod filament, the high surface area filament being dimensionally configured such that it can be used in place of the solid rod filament without reconfiguring or replacing the reactor power supply. The high surface area filament can be tubular, flat, or shaped with radial fins. Existing reactors thereby require only adaptation or replacement of filament supports to be adapted for use of the high surface area filament. The high surface area filament can be grown from silicon melt using the EFG method, so as to maintain a cross-sectional shape within a tolerance of +/10%.

The present invention provides an apparatus for manufacturing a single crystal according to a Czochralski method, including: a crucible configured to contain a raw material melt; a cylindrical heater surrounding the crucible, the heater being configured to heat the raw material melt; a main chamber that accommodates the crucible and the heater; an electrode that is inserted from the bottom of the main chamber and supports the cylindrical heater, the electrode being configured to supply electric power to the heater; and a melt-leakage receiving tray disposed on the bottom of the main chamber, the tray being configured to receive the raw material melt leaking from the crucible, wherein a melt-leakage cover is disposed below the crucible and above the electrode, the cover being configured to prevent contact between the raw material melt leaking from the crucible and the electrode.

A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.