A method is provided for decomposition of a polymeric article, wherein the polymeric article contains a polymer and one or more energy modulation agents, by applying an applied energy to the polymeric article, wherein the one or more energy modulation agents convert the applied energy into an emitted energy sufficient to cause bond destruction within the polymer.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

A method for attaching and detaching a substrate from a bonded stack is disclosed. A broadband light-absorbing material is combined with an adhesive material to form a broadband light-absorbing adhesive. A layer of the broadband light-absorbing adhesive is then applied on one side of a transparent carrier. A substrate is placed on the broadband light-absorbing adhesive and the transparent carrier to form a bonded stack. The substrate can be a wafer or a polymeric film. At this point, processing steps can be performed on the substrate. After the processing steps have been completed, a light pulse from a flashlamp is utilized to heat up the broadband light-absorbing adhesive in order to loosen the substrate from the bonded stack such that the substrate can be easily detached from the bonded stack.

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

A method for disassembling a stack of at least three substrates. The invention relates to the techniques for transferring thin films in the microelectronics field. It proposes a method for disassembling a stack of at least three substrates having between them two interfaces, one interface of which has an adhesion energy and an interface of which has an adhesion energy, with less than, the method comprising: 1) implementing a removal of material on the first substrate, in order to expose a surface of the second substrate, 2) transferring the stack onto a flexible adhesive film so that the surface has, with an adhesive layer of the film, an adhesion energy greater than, and 3) disassembling the third substrate at the interface between the second substrate and the third substrate. The method makes it possible to open the stack via the interface thereof with the highest adhesion energy.

Apparatuses and methods adapted for removing a layer of paint, sealant, or adhesive from a surface of an article, including wooden, metal, plaster, stone, and brick articles. The apparatuses are provided with a module comprising at least one carbon infrared emitter bulb that generates short-wavelength infrared radiation. The module has an opening through which the infrared radiation is emitted from the module, and the intensity and wavelengths of the infrared radiation are controlled to selectively attain temperatures in a range of about 90 to 375° C. at the surface of the article when located a distance of about 5 to 15 centimeters from the opening of the module.

A mass transfer apparatus, a mass transfer system, and a control method for mass transfer are provided. The mass transfer apparatus includes a beam emission assembly, a rotating lens, and a rotating lens adjusting assembly. The rotating lens is configured to receive the beam emitted from the beam emission assembly. The rotating lens adjusting assembly is connected with the rotating lens. The rotating lens adjusting assembly is configured to control the rotating lens to perform peripheral rotation. The rotating lens adjusting assembly is also configured to adjust a rotation radius of the rotating lens.

A mass transfer apparatus, a mass transfer system, and a control method for mass transfer are provided. The mass transfer apparatus includes a beam emission assembly, a rotating lens, and a rotating lens adjusting assembly. The rotating lens is configured to receive the beam emitted from the beam emission assembly. The rotating lens adjusting assembly is connected with the rotating lens. The rotating lens adjusting assembly is configured to control the rotating lens to perform peripheral rotation. The rotating lens adjusting assembly is also configured to adjust a rotation radius of the rotating lens.

A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

Disclosed is a thin subject assisted debonding method for separating temporarily bonded workpiece-carrier pair. The thin subject can be a thin wire, or thin filament, or thin blade. The thin subject can be applied between the workpiece and carrier pair in association with laser debonding or mechanical debonding to provide well controlled and targeted wedging function to the delaminating temporary adhesive and its adjacent substrate to which it is separating from. The workpiece can be a semiconductor wafer that has been thinned and processed, and the carrier can be a semiconductor non-device wafer or any other rigid substrate such as a glass wafer or panel. The application of a thin subject between the workpiece and carrier during debonding provides the advantage of high throughput and low defect rate.