An interconnect structure includes a dielectric block, a first conductive plug, a second conductive plug, a substrate, a first conductive line, and a second conductive line. The first conductive plug and the second conductive plug are surrounded by the dielectric block. The substrate surrounds the dielectric block. The first conductive line is connected to the first conductive plug and is in contact with a top surface of the dielectric block. The second conductive line is connected to the second conductive plug.

A stackable via package includes a substrate having an upper surface and a trace on the upper surface, the trace including a terminal. A solder ball is on the terminal. The solder ball has a solder ball diameter A and a solder ball height D. A via aperture is formed in a package body enclosing the solder ball to expose the solder ball. The via aperture includes a via bottom having a via bottom diameter B and a via bottom height C from the upper surface of the substrate, where A<B and 0=<C<1/2×D. The shape of the via aperture prevents solder deformation of the solder column formed from the solder ball as well as prevents solder bridging between adjacent solder columns.

A three-Dimensional Integrated Circuit (3DIC) Chip on Wafer on Substrate (CoWoS) packaging structure or system includes a silicon oxide interposer with no metal ingredients, and with electrically conductive TVs and RDLs. The silicon oxide interposer has a first surface and a second surface opposite to the first surface. The electrically conductive TVs penetrate through the silicon oxide interposer. The electrically interconnected RDLs are disposed over the first surface of the silicon oxide interposer, and are electrically coupled or connected to a number of the conductive TVs.

A package structure is disclosed herein. The package structure includes an insulating composite layer, a sealant disposed on the insulating composite layer, a first chip embedded in the sealant and having a plurality of first conductive pads exposed through the sealant, a circuit layer module having a plurality of circuit layers and a plurality of dielectric layers having a plurality of conductive vias, a second chip embedded in the circuit layer module and has a plurality of second conductive pads electrically connected to the circuit layers through the conductive vias, and a protecting layer having a plurality of openings disposed on the circuit layer module, in which the openings expose a portion of the circuit layer module.

A three-Dimensional Integrated Circuit (3DIC) Chip on Wafer on Substrate (CoWoS) packaging structure or system includes a silicon oxide interposer with no metal ingredients, and with electrically conductive TVs and RDLs. The silicon oxide interposer has a first surface and a second surface opposite to the first surface. The electrically conductive TVs penetrate through the silicon oxide interposer. The electrically interconnected RDLs are disposed over the first surface of the silicon oxide interposer, and are electrically coupled or connected to a number of the conductive TVs.

Multiple designs for a multi-layer circuit may be simulated to determine impedance profiles of each design, allowing a circuit designer to select a design based on the impedance profiles. One feature that can be modified is the structure surrounding the barrels of a differential VIA on layers that are not connected to the differential VIA. Specifically, one antipad can be used that surrounds both barrels or two antipads can be used, with one antipad for each barrel. Additionally, the size of the antipad or antipads can be modified. These modifications affect the impedance of the differential VIA. Additionally, a conductive region may be placed that connects to the VIA barrel even though the circuit on the layer does not connect to the VIA. This unused pad, surrounded by a non-conductive region, also affects the impedance of the differential VIA.

A stackable via package includes a substrate having an upper surface and a trace on the upper surface, the trace including a terminal. A solder ball is on the terminal. The solder ball has a solder ball diameter A and a solder ball height D. A via aperture is formed in a package body enclosing the solder ball to expose the solder ball. The via aperture includes a via bottom having a via bottom diameter B and a via bottom height C from the upper surface of the substrate, where A<B and 0=<C<1/2×D. The shape of the via aperture prevents solder deformation of the solder column formed from the solder ball as well as prevents solder bridging between adjacent solder columns.

The present disclosure relates to the method of manufacturing circuit having lamination layer using LDS (Laser Direct Structuring) to ease the application on surface structure for applied product of various electronic circuit and particularly, in which can form circuit structure of single-layer to multiple-layer on the surface of injection-molded substrate in the shape of plane or curved surface, metal product, glasses, ceramic, rubber or other material.

A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength λ.sub.1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength λ.sub.1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

A multi-layered board includes: a middle conductive layer; a first dielectric layer that is disposed directly on a first surface of the middle conductive layer; a second dielectric layer that is disposed directly on a second surface of the middle conductive layer; a first outer surface conductive layer that is disposed directly on an outer side of the first dielectric layer; and a second outer surface conductive layer that is disposed directly on an outer side of the second dielectric layer. The first outer surface conductive layer serves as a first outer surface of the multi-layered board, and the second outer surface conductive layer serves as a second outer surface of the multi-layered board. The middle conductive layer is solidly formed over an entire planar direction of the multi-layered board. The first dielectric layer and the second dielectric layer each independently have a thickness variation of 15% or less.