A method for removing noxious, hazardous, toxic, mutagenic, and/or carcinogenic compounds and/or precursor compounds from a comingled gas, liquid, and/or solid stream is described. In one embodiment, the method is used to prepare the stream for feeding to an oxidizer, such as a thermal oxidizer, to reduce the amount of particulate matter discharged by the oxidizer and includes passing the stream through an ambient or chilled temperature condenser followed by an optional gas/solid separator, and one or more gas scrubbers prior to feeding to the oxidizer.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Disclosed is a method of adding a feed medium into a bioprocess. The method includes receiving a stream of CO2-rich gas; treating the stream of CO2-rich gas to remove impurities therefrom; preparing an aqueous mixture for absorbing carbon dioxide, the aqueous mixture having at least one inorganic nitrogen compound in a range of 0.1-50 wt % of the aqueous mixture, the at least one inorganic nitrogen compound is a nitrogen source for microorganisms; absorbing carbon dioxide from the stream of CO2-rich gas into the aqueous mixture, the aqueous mixture with absorbed carbon dioxide forming a feed medium; and adding the feed medium into a bioprocess.

A composition having the structure of formula I:
[RAr(COOH).sub.2].sub.x[Ar(COOH).sub.3].sub.2-xM.sub.3.sup.2+(I)
is provided where M is Mn, Cu, Co, Fe, Zn, Cd, Ni, or Pt; R is a bromine, nitro, a primary amine, C.sub.1-C.sub.4 alkyl secondary amine, C.sub.1-C.sub.4 alkyl oxy, Br(C.sub.1-C.sub.4 alkyl), NO.sub.2(C.sub.1-C.sub.4 alkyl), a mercaptan, and reaction products of any of the aforementioned with acyl chlorides of the formulas: CH.sub.3(CH.sub.2).sub.mC(O)Cl, or CH.sub.3(CH(C.sub.1-C.sub.4 alkyl)CH.sub.2).sub.mC(O)Cl, or CH.sub.3(CH.sub.2).sub.m-Ph-(CH.sub.2).sub.pC(O)Cl, where Ph is a C.sub.6 phenyl or C.sub.6 phenyl with one or more hydrogens replaced with F, C.sub.1-C.sub.4 fluoroalkyl, or C.sub.1-C.sub.4 perfluoroalkyl; m is independently in each occurrence an integer of 0 to 12 inclusive; p is an integer of 0 to 36 inclusive, to form an amide, a thioamide, or an ester; Ar is a 1,3,5-modified phenyl, and 1.4>x>0. A process of synthesis thereof and the use to chemically modify a gaseous reactant are also provided.

An apparatus for purifying a process gas containing at least one pollutant gas, having a reactor vessel, has a cylindrical region and a tapering region, and into which oxygen or an oxygen-containing gas can be introduced as a reaction gas into at least one gas inlet and can be discharged through at least one gas outlet. The at least one gas inlet introduces a defined volumetric flow of the reaction gas into the reactor vessel tangentially to a circumferential surface of the cylindrical region. The apparatus may have a pollutant gas inlet, which introduces a defined volumetric flow of the process gas containing at least one pollutant gas into the reactor vessel, so that the at least one pollutant gas and the reaction gas are mixed with each other in the direction of the gas outlet and chemically react with each other on their way through the reactor vessel.

A filter is provided for removing contaminants from a gas flow (e.g., an air flow). Multiple panel filters are arranged in a filter housing. The panel filters are arranged parallel or near-parallel to a main gas flow direction and spaced apart to define elongated gas flow channels between adjacent panel filters, each elongated gas flow channel extending generally in the gas flow direction. The elongated gas flow channels include inlet channel(s) and outlet channel(a) arranged in an alternating manner, the inlet channel(s) configured receiving the gas flow at the inlet end and the outlet channel(s) outputting a filtered gas flow from the outlet end. Gas flow redirecting structures are arranged to redirect the gas flow in each inlet channel through adjacent panel filter(s) and into adjacent outlet channel(s). The filter may provide a pressure drop of less than 3 iwg, less than 1 iwg, or less than 0.3 iwg.

An apparatus for cleaning exhaust gas. The apparatus includes a housing having an upstream end configured to receive exhaust gas and a downstream end configured to release the exhaust gas. At least one coalescing filter layer and a catalyst filter layer are disposed within the housing. The catalyst filter layer includes molded sintered pellets formed from a porous material and a non-precious metal catalyst. The molded sintered pellets create a porous area for coalescing oil mist, and the catalyst hydrogen peroxide.

A method for removing noxious, hazardous, toxic, mutagenic, and/or carcinogenic compounds and/or precursor compounds from a comingled gas, liquid, and/or solid stream is described. In one embodiment, the method is used to prepare the stream for feeding to an oxidizer, such as a thermal oxidizer, to reduce the amount of particulate matter discharged by the oxidizer and includes passing the stream through an ambient or chilled temperature condenser followed by an optional gas/solid separator, and one or more gas scrubbers prior to feeding to the oxidizer.