A cleaning apparatus (10) for a semiconductor substrate that cleans a semiconductor substrate by using ozone water, including cooling means (3) for cooling ozone water (W2) of 20 C. or more to a predetermined temperature, and cleaning means (4) for cleaning a substrate by using ozone water (W3) cooled by the cooling means (3). The cleaning means (4) has a cleaning tank (41) for cleaning the substrate by immersing the substrate in the ozone water (W3) cooled by the cooling means (3). According to a cleaning method using the semiconductor substrate cleaning apparatus (10), by immersing a semiconductor substrate in ozone water, organic substances, such as resist, and metal foreign materials remaining on the substrate surface are cleaned and removed, and the loss of substrate material in a cleaning step can be reduced.

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Methods of performing high velocity cycle purging in gas specialty systems and the resulting device are provided. Embodiments include providing a gas flow through a vacuum generator connected to a venting reservoir associated with a gas subsystem; detecting a predetermined vacuum level within the venting reservoir; venting the gas with a high velocity through a vent valve connected to the venting reservoir; upon reestablishing the predetermined vacuum level, terminating the venting of the gas; and introducing a dilution purge gas through a purge source valve to pressurize the gas subsystem.

According to one embodiment, a plating apparatus for electroplating a substrate including a non-pattern area is provided. The plating apparatus includes a plating tank for holding the plating solution, an anode configured to be connected to a positive electrode of a power supply, and a paddle configured to move in the plating tank to stir the plating solution held in the plating tank. The paddle is configured such that at least a part of the non-pattern area of the substrate is constantly blocked when the paddle is viewed from the anode while the paddle is stirring the plating solution.

A gas-dissolved liquid producing apparatus capable of increasing a gas dissolution efficiency and enhancing stability of the concentration of gas-dissolved liquid is provided.

The gas-dissolved producing apparatus 1 includes an ozone gas supply unit 2 for supplying ozone gas, a pure water supply unit 3 for supplying pure water, and an ozonated water generator 4 for dissolving ozone gas in supplied pure water to generate ozonated water. The generator 4 includes a first nozzle 10 having a first optimum flow rate, a second nozzle 11 having a second optimum flow rate different from the first optimum flow rate, a flow rate detector 15 for detecting the flow rate of the supplied pure water, and a controller 16 for controlling which one of the first nozzle and the second nozzle should be supplied with the supplied gas, based on the flow rate of the pure water detected by the detector 15.

A substrate treatment apparatus includes: a substrate treatment unit that treats a substrate with a treatment liquid containing ozone dissolved therein; a recovery tank in which the treatment liquid discharged from the substrate treatment unit is recovered; a recovery pipe that connects the substrate treatment unit to the recovery tank; a heating member that heats the treatment liquid to a first temperature in at least one of the recovery pipe and the recovery tank; a supply piping system that supplies the treatment liquid from the recovery tank to the substrate treatment unit; and an ozone gas pipe that supplies ozone gas to the supply piping system to mix the ozone gas in the treatment liquid passing through the supply piping system.

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

A specific resistance value adjustment apparatus includes: a hollow fiber membrane module; a module passing pipe which passes through the hollow fiber membrane module; a bypassing pipe which bypasses the hollow fiber membrane module; a liquid discharge pipe which communicates with the module passing pipe and the bypassing pipe through a joint portion; a first flow rate detection unit which detects a first flow rate of a liquid flowing to at least one of a liquid supply pipe and the liquid discharge pipe; a control valve which opens and closes the module passing pipe; and a control unit which sets an opening degree of the control valve in response to the first flow rate detected by the first flow rate detection unit.

To prevent turbulence on a surface of a plating solution as much as possible and suppress spattering and splashing of the plating solution even when the plating solution is stirred. Provided is a wave absorbing member that is attachable to a paddle moveable in a horizontal direction to stir liquid. The wave absorbing member includes a thin plate shaped body portion configured to move on a liquid surface when moving in the horizontal direction and a front end portion designed to be tapered toward an end from the body portion.

A vaporizer includes a vaporization chamber in which a liquid material is heated and vaporized and a heat exchange element arranged in the vaporization chamber. The vaporization chamber has a groove in its inner surface. This helps improve vaporization performance of the liquid material and the vaporization of the liquid material at a high flow rate.