CLEANING APPARATUS FOR SEMICONDUCTOR SUBSTRATES AND CLEANING METHOD FOR SEMICONDUCTOR SUBSTRATES

Abstract

A cleaning apparatus (10) for a semiconductor substrate that cleans a semiconductor substrate by using ozone water, including cooling means (3) for cooling ozone water (W2) of 20 C. or more to a predetermined temperature, and cleaning means (4) for cleaning a substrate by using ozone water (W3) cooled by the cooling means (3). The cleaning means (4) has a cleaning tank (41) for cleaning the substrate by immersing the substrate in the ozone water (W3) cooled by the cooling means (3). According to a cleaning method using the semiconductor substrate cleaning apparatus (10), by immersing a semiconductor substrate in ozone water, organic substances, such as resist, and metal foreign materials remaining on the substrate surface are cleaned and removed, and the loss of substrate material in a cleaning step can be reduced.

Claims

1. A substrate cleaning apparatus for cleaning a substrate by using ozone water, comprising: cooling means for cooling ozone water of 20 C. or more to a predetermined temperature; and cleaning means for cleaning a substrate with ozone water cooled by the cooling means.

2. The substrate cleaning apparatus according to claim 1, wherein the cleaning means includes a cleaning tank for cleaning the substrate by immersing the substrate in the ozone water cooled by the cooling means.

3. The substrate cleaning apparatus according to claim 1, wherein the cooling means includes a chiller capable of cooling ozone water to 0 C. or more and less than 20 C.

4. The substrate cleaning apparatus according to claim 1, further comprising ozone water generating means for generating ozone water to be supplied to the cooling means, wherein the ozone water generating means includes an ozone generating device for generating ozone, and a dissolving membrane module for dissolving ozone generated by the ozone generating device in ultrapure water.

5. The substrate cleaning apparatus according to claim 4, further comprising degassing means for degassing ultrapure water to be supplied to the dissolving membrane module, wherein the degassing means includes a degassing membrane module and a vacuum pump.

6. A substrate cleaning method for cleaning a substrate by using ozone water, comprising: a cooling step of cooling ozone water of 20 C. or more to a predetermined temperature; and a cleaning step of cleaning the substrate with the ozone water cooled in the cooling step.

Description

BRIEF DESCRIPTION OF DRAWING

[0022] FIG. 1 is an explanatory diagram illustrating a cleaning apparatus for a semiconductor substrate according to an embodiment of the present invention.

DESCRIPTION OF THE EMBODIMENTS

[0023] Embodiments of a cleaning apparatus for a semiconductor substrate and a cleaning method for a semiconductor substrate according to the present invention will be described below appropriately with reference to the drawing. The embodiments described below are for the purpose of facilitating the understanding of the present invention, and do not limit the present invention at all.

[0024] [Clearing Apparatus for Semiconductor Substrate]

[0025] FIG. 1 is an explanatory diagram illustrating a cleaning apparatus 10 for a semiconductor substrate according to an embodiment of the present invention. The cleaning apparatus 10 illustrated in FIG. 1 mainly includes degassing means 1, ozone water generating means 2, cooling means 3, and cleaning means 4. The degassing means 1 is adapted to degas ultrapure water W (18.2 M<), and includes a degassing membrane module 11 and a vacuum pump 12. The ozone water generating means 2 is adapted to generate ozone water W2, and includes an ozone generating device 22 for generating ozone gas, and a dissolving membrane module 21 for dissolving ozone gas generated by the ozone generating device 22 in ultrapure water W1 which has been subjected to a degassing treatment. The cooling means 3 is adapted to cool ozone water W2, and includes a chiller 31 capable of cooling the ozone water W2 to 0 C. or more and less than 20 C. The cleaning means 4 is adapted to clean a semiconductor substrate, and includes a cleaning tank 41 for cleaning the semiconductor substrate by immersing the semiconductor substrate in ozone water W3 cooled by the chiller 31.

[0026] The cleaning apparatus 10 for a semiconductor substrate is provided with a supply pipe L1 for supplying ultrapure water W from a raw water tank (not illustrated) to the degassing membrane module 11, a supply pipe L2 for connecting the degassing membrane module 11 and the dissolving membrane module 21, a supply pipe L3 for connecting the dissolving membrane module 21 and the chiller 31, and a supply pipe L4 connecting the chiller 31 and the cleaning tank 41. The vacuum pump 12 is connected to the degassing membrane module 11 via a vacuum pipe L5. Waste water pipes L6 and L7 for discharging drain water D1 and D2 are connected to the degassing membrane module 11 and the dissolving membrane module 21 respectively, and the waste water pipes L6 and L7 are connected to a drain tank 5. An ozone gas supply pipe L9 for supplying ozone gas generated by the ozone generating device 22 is connected to the dissolving membrane module 21, and an oxygen gas supply pipe L8 for supplying oxygen gas is connected to the ozone generating device 22.

[0027] (Degassing Means)

[0028] The degassing means 1 is adapted to remove dissolved oxygen, dissolved carbon dioxide and the like in the ultrapure water W, and includes the degassing membrane module 11 and the vacuum pump 12. The inside of the degassing membrane module 11 is compartmented into a liquid phase chamber and a gas phase chamber by a degassing membrane, ultrapure water W is introduced from an introduction port side of the liquid phase chamber, and degassed ultrapure water W1 is discharged from a discharge port side. No limitation is particularly imposed on the degassing membrane of the degassing membrane module 11 insofar as the degassing membrane does not permeate water therethrough, but permeates gas dissolved in water therethrough, and for example, a polymer membrane such as polypropylene, polydimethylsiloxane, polycarbonate-polydimethylsiloxane block copolymer, polyvinylphenol-polydimethylsiloxane-polysulfone block copolymer, poly(4-methylpentene-1), poly(2,6-dimethylphenylene oxide) or polytetrafluoroethylene, or the like is applicable. The vacuum pump 12 is connected to the gas phase chamber of the degassing membrane module 11 through the vacuum pipe L5. No imitation is particularly imposed on the vacuum pump 12, and for example, a pump capable of sucking water vapor such as a water-sealed vacuum pump or a scroll pump having a water vapor removal function is applicable. By reducing the pressure on the gas phase chamber side of the degassing membrane module 11 with the vacuum pump 12, it is possible to efficiently exhaust dissolved gas causing oxidation of ultrapure water and breeding of bacteria to the outside of the degassing membrane module 11, so that the degassed ultrapure water W1 can be efficiently obtained.

[0029] (Ozone Water Generating Means)

[0030] The ozone water generating means 2 is adapted to generate ozone water W2 by dissolving ozone gas in degassed ultrapure water W1, and includes the ozone generating device 22 for generating ozone gas based on oxygen gas, and the dissolving membrane module 21 for dissolving the ozone gas generated by the ozone generating device 22 in the degassed ultrapure water W1. No limitation is particularly imposed on the ozone generating device 22, and a known silent discharge type, an ultraviolet lamp type, a water electrolysis type or the like is applicable. The inside of the dissolving membrane module 21 is compartmented into a liquid phase chamber and a gas phase chamber by a dissolving membrane, degassed ultrapure water W1 is introduced from an introduction port side of the liquid phase chamber, and generated ozone water W2 is discharged from a discharge port side. No limitation is particularly imposed on the dissolving membrane of the dissolving membrane module 21 insofar as the dissolving membrane does not permeate water therethrough, but permeates gas dissolved in water therethrough. For example, a polymer membrane such as polypropylene, polydimethylsiloxane, polycarbonate-polydimethylsiloxane block copolymer, polyvinylphenol-polydimethylsiloxane-polysulfone block copolymer, poly(4-methylpentene-1), poly(2,6-dimethylphenylene oxide) or polytetrafluoroethylene, or the like is applicable. By using the dissolving membrane module 21, ozone having a relatively small dissolution rate in water can be efficiently dissolved in the degassed ultrapure water W1, so that high-concentration ozone water W2 can be generated.

[0031] Note that since heated ultrapure water (warm ultrapure water) is generally used to dissolve ozone gas at a high concentration for generation of high-concentration ozone water, the high-concentration ozone water W2 described above usually has a water temperature of 20 C. or more. In the cleaning apparatus 10 for a semiconductor substrate, the supply pipe L2 may be provided with a heating device (not illustrated) for controlling the temperature of the degassed ultrapure water W1 to be supplied to the dissolving membrane module 21.

[0032] (Cooling Means)

[0033] The cooling means 3 is adapted to cool the ozone water W2, and includes the chiller 31 capable of cooling the ozone water W2 to 0 C. or more and less than 20 C. No limitation is particularly imposed on the chiller 31 insofar as the chiller 31 is capable of cooling the ozone water W2 to 0 C. or more and less than 20 C., and a known cooling device can be applied. The ozone water W3 whose temperature is controlled to 0 C. or more and less than 20 C. is reduced in the activity of dissolved ozone, which makes it possible to suppress formation of an oxide film on the surface of the semiconductor substrate in the cleaning means 4 in a subsequent stage, so that the loss of the substrate material can be reduced.

[0034] Note that the cooling means 3 may include a chiller unit having plural chillers 31 connected side by side, and this chiller unit may be configured to be capable of switching the operating states of the plural chillers 31 according to the degree of deterioration of the cooling function of each chiller 31. The cooling means 3 has such a configuration, whereby a chiller 31 to be used can be selected by switching the operating states of the plural chillers 31. Therefore, even when there is a chiller 31 whose cooling function deteriorates due to, for example, occurrence of microorganisms or the like, the operation of the entire chiller unit can be continued without being stopped, and the production efficiency of the cooled ozone water W3 is enhanced.

[0035] (Cleaning Means)

[0036] The cleaning means 4 is adapted to clean the semiconductor substrate with the cooled ozone water W3, and includes the cleaning tank 41 for cleaning the semiconductor substrate by immersing the semiconductor substrate in the ozone water W3 cooled to 0 C. or more and less than 20 C. No limitation is particularly imposed on the cleaning tank 41 insofar as the whole semiconductor substrate to be cleaned can be immersed, and existing ones can be applied. By using the cleaning tank 41, the entire substrate can be immersed in the cooled ozone water W3. Therefore, a problem such as occurrence of static electricity does not occur, and efficient cleaning can be performed. Further, since the ozone water W3 whose temperature is controlled to 0 C. or more and less than 20 C. is reduced in the activity of dissolved ozone, the formation of the oxide film on the surface of the semiconductor substrate can be suppressed, so that the loss of the semiconductor substrate material can be reduced and the semiconductor substrate can be stably cleaned.

[0037] [Cleaning Method for Semiconductor Substrate]

[0038] Next, a cleaning method using the cleaning apparatus 10 for a semiconductor substrate according to the embodiment as described above will be described in detail with reference to FIG. 1.

[0039] (Degassing Step)

[0040] In a degassing step, first, the ultrapure water W (18.2 M<) is introduced from the supply pipe L1 into the liquid phase chamber of the degassing membrane module 11. At this time, the gas phase chamber side of the degassing membrane module 11 is reduced in pressure by the vacuum pump 12, so that dissolved oxygen and dissolved carbon dioxide that cause oxidation and breeding of bacteria in the ultrapure water W are exhausted to the outside of the degassing membrane module 11. As a result, degassed ultrapure water W1 is obtained. The degassed ultrapure water W1 is passed through the supply pipe L2 and then supplied to the dissolving membrane module 21 in a subsequent stage. Note that drain water D1 of the degassing membrane module 11 is passed through the waste water pipe L6 and then stored in the drain tank 5.

[0041] (Ozone Water Generating Step)

[0042] In an ozone water generating step, oxygen gas is first introduced from the oxygen gas supply pipe L8 into the ozone generating device 22, and ozone gas is generated based on the oxygen gas. The generated ozone gas is introduced from the ozone gas supply pipe L9 into the gas phase chamber of the dissolving membrane module 21, and the degassed ultrapure water W1 is supplied from the supply pipe L2 into the liquid phase chamber. By dissolving the ozone gas in the degassed ultrapure water W1 inside the dissolving membrane module 21, high-concentration ozone water W2 is generated. The generated ozone water W2 is passed through the supply pipe L3, and then supplied to the chiller 31 in the subsequent stage. Drain water D2 of the dissolving membrane module 21 is passed through the waste water pipe L7 and then stored in the drain tank 5.

[0043] Note that heated ultrapure water (warm ultrapure water) is generally used to dissolve ozone gas at a high concentration for generation of high-concentration ozone water, so that the high-concentration ozone water W2 described above usually has a water temperature of 20 C. or more. In the semiconductor substrate cleaning apparatus 10, the supply pipe L2 may be provided with a heating device (not illustrated) for controlling the temperature of the degassed ultrapure water W1 to be supplied to the dissolving membrane module 21. The ozone water generating step may include a step of heating the degassed ultrapure water W1.

[0044] (Cooling Step)

[0045] Next, in a cooling step, the ozone water W2 supplied to the chiller 31 is cooled to 0 C. or more and less than 20 C. The ozone water W3 cooled to 0 C. or more and less than 20 C. is passed through the supply pipe L4 and then supplied to the cleaning tank 41 in the subsequent stage.

[0046] Note that the cooling step may be performed with a chiller unit having plural chillers 31 connected side by side by switching the operating states of the plural chillers 31 according to the degree of deterioration of the cooling function of each chiller 31. A chiller 31 to be used can be selected by switching the operating states of the plural chillers 31. Therefore, even when there is a chiller 31 whose cooling function deteriorates due to, for example, occurrence of microorganism or the like, the operation of the entire chiller unit can be continued without being stopped, so that the production efficiency of the cooled ozone water W3 is enhanced.

[0047] (Cleaning Step)

[0048] In a cleaning step, first, when the cooled ozone water W3 of a predetermined amount is supplied to the cleaning tank 41, a semiconductor substrate is transported into the cleaning tank 41 by transporting means (not illustrated). The semiconductor substrate transported into the cleaning tank 41 is immersed in the cooled ozone water W3 to be cleaned. When a predetermined time has elapsed, the cleaned semiconductor substrate is transported out of the cleaning tank 41 by the transporting means. Note that the transporting means may be configured to transport plural semiconductor substrates into and out of the cleaning tank 41. The ozone water W3 after the semiconductor substrate has been immersed and cleaned is passed through a waste water pipe (not illustrated) and then discharged to the outside of the cleaning tank 41. Then, the cleaning step is repeatedly performed on a semiconductor substrate to be cleaned next.

[0049] As described above, according to the cleaning method of the present invention, since the activity of dissolved ozone is reduced by using low-temperature ozone water which has been cooled to a predetermined temperature, particularly a temperature of 0 C. or more and less than 20 C., for the cleaning of the semiconductor substrate, formation of an oxide film on the surface of the substrate can be suppressed, so that it is possible to reduce the loss of the substrate material.

[0050] The present invention has been described above with reference to drawing. However, the present invention is not limited to the foregoing embodiment, and various changes may be implemented. In the present embodiment, the cleaning of the semiconductor substrate is performed by the immersion type using the cleaning tank 41 in the cleaning means 4. However, if it is possible to clean the semiconductor substrate with the ozone water W3 cooled to 0 C. or more and less than 20 C., the cleaning may be performed, for example, by the single wafer type for jetting the ozone water W3 to the semiconductor substrate.

EXAMPLES

[0051] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the following examples.

[0052] A cleaning treatment on a semiconductor substrate was performed by using the cleaning apparatus 10 for the semiconductor substrate illustrated in FIG. 1. First, the semiconductor substrate was immersed in normal-temperature ozone water (15 ppm) for 5 minutes, and then immersed in 0.5 wt % dilute hydrofluoric acid for 5 minutes to clean the surface.

Example 1

[0053] The cleaned semiconductor substrate was immersed in ozone water W3 cooled by the chiller 31 for 5 minutes to be cleaned, and then the thickness of the oxide film was measured by an ellipsometer.

Comparative Example 1

[0054] After the immersion cleaning was performed on the cleaned semiconductor substrate in a manner similar to that of the Example 1 except that the ozone water for the immersion cleaning of the semiconductor substrate was not cooled, and the thickness of the oxide film was measured by the ellipsometer.

[0055] Table 1 illustrates numerical values of the thickness of the oxide film after the immersion cleaning using the ozone water for the Example 1 and the Comparative Example 1. As is apparent from this result, the activity of ozone in ozone water can be reduced by cooling the temperature of the ozone water for immersing the semiconductor substrate to 0 C. or more and less than 20 C., and the thickness of the oxide film can be controlled even by the same immersion time.

TABLE-US-00001 TABLE 1 COMPARATIVE EXAMPLE 1 EXAMPLE 1 USED SUBSTRATE Si (100) WAFER Si (100) WAFER ULTRAPURE WATER 5 5 FLOW RATE [L/min] OZONE WATER 15 15 CONCENTRATION [ppm] OZONE WATER 12 26 TEMPERATURE [ C.] IMMERSION TIME [min] 5 5 THICKNESS OF OXIDE 8.284 15.292 FILM []

[0056] As described above, according to the cleaning apparatus and the cleaning method for a semiconductor substrate of the present invention, it is possible to clean and remove organic substances, such as resist, and metal foreign materials remaining on the surface of a substrate, and reduce the loss of substrate material in the cleaning step.

INDUSTRIAL APPLICABILITY

[0057] The present invention is useful as a cleaning apparatus and a cleaning method for contaminants of organic substances, such as resists, and metal foreign materials generated in a manufacturing process in manufacturing of semiconductor devices.

DESCRIPTION OF REFERENCE NUMERALS

[0058] 10 cleaning apparatus for semiconductor substrate [0059] 1 degassing means [0060] 11 degassing membrane module [0061] 12 vacuum pump [0062] 2 ozone water generating means [0063] 21 dissolving membrane module [0064] 22 ozone generating device [0065] 3 cooling means [0066] 31 chiller [0067] 4 cleaning means [0068] 41 cleaning tank [0069] 5 drain tank [0070] L1, L2, L3, L4 supply pipe [0071] L5 vacuum pipe [0072] L6, L7 waste water pipe [0073] L8 oxygen gas supply pipe [0074] L9 ozone gas supply pipe [0075] W ultrapure water [0076] W1 degassed ultrapure water [0077] W2 ozone water [0078] W3 cooled ozone water [0079] D1, D2 drain water