B05D1/60

LAMINATE AND METHOD FOR MANUFACTURING LAMINATE

A laminate including a base material and a resin layer provided on at least one surface of the base material. The resin layer is formed of a heat- or active energy ray-curable resin composition, and an outermost surface of the laminate on the one surface side of the base material has an unevenness containing a wrinkle structure.

METHODS FOR PLASMA DEPOSITING POLYMERS COMPRISING CYCLIC SILOXANES AND RELATED COMPOSITIONS AND ARTICLES

Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.

PRECURSORS FOR DEPOSITING FILMS WITH HIGH ELASTIC MODULUS

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dialkyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dialkyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dialkyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜36 GPa, and an at. % carbon from ˜10 to ˜36 as measured by XPS.

METHOD AND APPARATUS FOR DEPOSITING ORGANIC LAYERS

An apparatus for depositing organic layers on a substrate includes a gas-mixing device with one or more inlets, each for supplying a gas flow consisting of previously vaporized organic molecules that are conveyed by a carrier gas and have a molar mass greater than 300 g/mol or 400 g/mol, gas diversion elements which homogeneously mix the organic molecules in the carrier gas, and an outlet from which a homogeneous gas mixture discharges. The apparatus also comprises a conveying pipe which is connected to the outlet, and a gas inlet element that has a gas distribution volume, into which the conveying pipe leads and which has a gas outlet face that has gas outlet openings and faces a substrate holder for receiving the substrate. Furthermore, layers are deposited on the substrate using such an apparatus. The lateral homogeneity of the deposited layers is improved by one of several techniques.

Wire grid polarizer with silane protective coating

A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: ##STR00001##
A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R.sup.1).sub.d(R.sup.2).sub.e(R.sup.3).sub.g. In the above WGP and method, X can be a bond to the ribs; each R.sup.1 can be a hydrophobic group; each R.sup.3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R.sup.2 can be a silane-reactive-group; and each R.sup.6 can be an alkyl group, an aryl group, or combinations thereof.

INITIATED CHEMICAL VAPOR DEPOSITION AND STRUCTURATION OF POLYOXYMETHYLENE
20220372201 · 2022-11-24 · ·

This invention relates to a method for synthesizing polyoxymethylene on a substrate. The method includes depositing monomer capable of forming polyoxymethylene by an initiated polymerization reaction and an initiator, via initiated chemical vapor deposition (iCVD) onto a surface of a substrate in an initiated chemical vapor deposition reactor.

CATALYST AND METHOD FOR ELECTROREDUCTION OF CARBON DIOXIDE, CARBON MONOXIDE, OR A COMBINATION THEREOF

There is provided a catalytic system including a fibrous hydrophobic substrate, a first layer having a first layer thickness including copper or copper alloy nanoparticles covering the polymeric substrate, and a second layer having a second layer thickness over the first layer and including amorphous nitrogen-doped carbon, wherein the catalytic system includes confined interlayer spaces defined by regions where the first layer and the second layer are spaced apart from each other. The catalytic system can be used for catalyzing the electrochemical reduction of carbon dioxide, carbon monoxide, or a combination thereof. Thus, there is also provided a method for the electrochemical reduction of carbon dioxide, carbon monoxide, or a combination thereof, using the catalytic system.

Systems, methods, and articles for polymer deposition

Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.

SELECTIVE ATTACHMENT TO ENHANCE SiO2:SiNx ETCH SELECTIVITY

Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

SELECTIVE PATTERNING WITH MOLECULAR LAYER DEPOSITION

Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.