B05D1/60

HIGHLY STRETCHABLE SUPERHYDROPHOBIC THIN FILM USING INITIATED CHEMICAL VAPOR DEPOSITION AND METHOD OF PREPARING SAME
20220363941 · 2022-11-17 ·

A highly stretchable superhydrophobic thin film using initiated chemical vapor deposition is prepared by a method in which a substrate is coated with a copolymer at a nanometer thickness by allowing a fluorine monomer containing 4 to 6 fluoroalkyl groups and having a glass transition temperature of 5° C. or less to react with a crosslinking monomer on the substrate in the presence of an initiator in an initiated chemical vapor deposition reactor and thus its durability can be secured in foldable and wearable devices.

SYSTEMS AND METHODS FOR MULTI-TARGET DEPOSITION AND ASSAYS

Disclosed herein is are methods and apparatuses for synthesizing deposited films of compounds (e.g., organic compounds such as a pharmaceutical active ingredient or a new chemical entity) on or in a variety of substrates, where such deposited compounds the desired stability under storage conditions, ease of handling, and yet enhanced dissolution properties when used in various assays. The disclosure further relates to methods of coating substrates, such as medical or diagnostic devices, with deposited films of organic compounds, as well as film-coated substrates.

TEMPORARY PASSIVATION LAYER ON A SUBSTRATE
20220359332 · 2022-11-10 ·

A substrate includes a metal component on a surface. A polymeric layer is deposited on the surface using molecular layer deposition. The polymeric layer includes a metalcone and has a thickness from 1 nm to 20 nm. The polymeric layer is stable at room temperature, but will undergo a structural change at high temperatures. The polymeric layer can be annealed to cause a structural change, which can occur during soldering.

METHODS TO ENHANCE BIOAVAVAILABILITY OF ORGANIC SMALL MOLECULES AND DEPOSITED FILMS MADE THEREFROM
20230044649 · 2023-02-09 ·

Solid films and articles having a surface with discrete regions patterned with a deposited low molecular weight organic compound, such as pharmaceutical actives and new chemical entities, are provided. The organic compound may be present at ≥ about 99 mass % in the one or more discrete regions and may be crystalline or amorphous. The deposited organic compound may be deposited as a film having high surface area. The deposited organic compound exhibits enhanced solubility and bioavailability, by way of non-limiting example. Methods of organic vapor jet printing deposition method of such a low molecular weight organic compound in an inert gas stream are also provided.

Urea (multi)-(meth)acrylate (multi)-silane compositions and articles including the same

Urea (multi)-(meth)acrylate (multi)-silane precursor compounds, synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds, either neat or in a solvent, and optionally with a catalyst, such as a tin compound, to accelerate the reaction. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-(meth)acrylate (multi)-silane precursor compound synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the urea (multi)-(meth)acrylate (multi)-silanes and their use in composite films and electronic devices are described.

Silicon hydrazido precursor compounds
11492364 · 2022-11-08 · ·

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE

A substrate treatment method includes a first gas treating step, a water-repellency treatment step, and a spraying step. In the first gas treating step, a first gas is supplied to the substrate inside the chamber in a state in which the inside of the chamber is decompressed. The first gas includes gas of an organic solvent. The water-repellency treatment step is executed after the first gas treating step. In the water-repellency treatment step, the inside of the chamber is in the decompressed state, and a water-repellent agent is supplied to the substrate inside the chamber. The spraying step is executed after the water-repellency treatment step. In the spraying step, the inside of the chamber is in the decompressed state, and a first liquid is sprayed over the substrate inside the chamber. The first liquid includes liquid of an organic solvent.

HYDROPHOBIC AND OLEOPHOBIC SURFACES AND USES THEREOF

A methodology is provided for generating hydrophobic superhydrophobic, oleophobic and/or superoleophobic surfaces. Compositions of matter made of a substrate having deposited on a surface thereof (e.g., by thermal evaporation) hydrocarbon waxes, including fluorinated waxes, are disclosed. Process of preparing such compositions of matter and articles of manufacturing incorporating such compositions are also disclosed. Further disclosed are articles of manufacturing and methods which are useful in inhibiting, reducing and/or retarding biofilm formation, and which include applying waxes (e.g., by thermal evaporation) on a surface of the articles.

FILM-FORMING METHOD
20220341033 · 2022-10-27 ·

The film-forming method of forming a target film on a substrate includes preparing the substrate including a first material layer formed on a surface of a first region, and including a second material layer, which is different from the first material, formed on a surface of a second region; controlling the temperature of the substrate to a first temperature; forming the self-assembled film on a surface of the first material layer at the first temperature by supplying a raw-material gas for a self-assembled film; controlling the temperature of the substrate to a second temperature higher than the first temperature; and further forming a self-assembled film at the second temperature on the first material layer on which the self-assembled film has been formed at the first temperature by supplying the raw-material gas for the self-assembled film.

BARRIER LAYER SYSTEM AND METHOD FOR PRODUCING A BARRIER LAYER SYSTEM

A layer system includes barrier properties against oxygen and water vapor. There may be an alternating layer system of at least two aluminum oxide layers and at least two titanium oxide layers. The aluminum oxide layers and the titanium oxide layers are deposited alternately on top of one another. The aluminum oxide layers and the titanium oxide layers are deposited by ALD layer deposition with a layer thickness of 5 nm to 20 nm. A first Parylene layer is deposited with a layer thickness of 0.1 μm to 50 μm on a first side of the alternating layer system by CVD.