Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

A printer deposits material onto a substrate as part of a manufacturing process for an electronic product; at least one transported component experiences error, which affects the deposition. This error is mitigated using transducers that equalize position of the component, e.g., to provide an “ideal” conveyance path, thereby permitting precise droplet placement notwithstanding the error. In one embodiment, an optical guide (e.g., using a laser) is used to define a desired path; sensors mounted to the component dynamically detect deviation from this path, with this deviation then being used to drive the transducers to immediately counteract the deviation. This error correction scheme can be applied to correct for more than type of transport error, for example, to correct for error in a substrate transport path, a printhead transport path and/or split-axis transport non-orthogonality.

A printer deposits material onto a substrate as part of a manufacturing process for an electronic product; at least one transported component experiences error, which affects the deposition. This error is mitigated using transducers that equalize position of the component, e.g., to provide an “ideal” conveyance path, thereby permitting precise droplet placement notwithstanding the error. In one embodiment, an optical guide (e.g., using a laser) is used to define a desired path; sensors mounted to the component dynamically detect deviation from this path, with this deviation then being used to drive the transducers to immediately counteract the deviation. This error correction scheme can be applied to correct for more than type of transport error, for example, to correct for error in a substrate transport path, a printhead transport path and/or split-axis transport non-orthogonality.

A photosensitive conductive paste that contains(a) a conductive powder in an amount of 70.3 to 85.6 mass % with respect to the total amount of the photosensitive conductive paste; (b) a photosensitive resin composition containing an alkali-soluble polymer, a photosensitive monomer, a pnotopolym.erization initiator, and a solvent; and (c) a glass frit. The mass ratio of the glass frit to the conductive powder is 0.020 to 0.054, and the glass frit has a softening point that is equal to or above the temperature at which sintering of the conductive powder starts.

A primer layer comprising a polyvinyl butyral resin enhances adhesion of silver nanoparticle inks onto plastic substrates. The primer layer comprises a polyvinyl butyral (PVB) resin having a polyvinyl alcohol content between about 18 wt. % to about 21 wt. %. The PVB resin may also have a glass transition temperature greater than about 70° C. Optionally, the PVB primer layer may further be enhanced by cross-linking using a melamine-formaldehyde resin. Conductive traces formed on plastic substrates having the PVB primer layer exhibit an acceptable cross-hatch adhesion rating with little to no degradation of adhesion being observed after exposure to 4-days salt mist aging or 1-day high humidity aging.

A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained.

Provided is a negative electrode material for a lithium ion secondary battery, which has excellent high-temperature storage characteristics and cycle characteristics. The negative electrode material for a lithium ion secondary battery has a high molecular weight polymer adsorbed on a carbon material, the O/C value of surface functional group quantity is 4.5% or more and 25% or less in the negative electrode material for a lithium ion secondary battery, and the S/C value of surface functional group quantity is 0.05% or more and 2.5% or less in the negative electrode material for a lithium ion secondary battery. Also provided are a negative electrode for a lithium ion secondary battery, lithium ion secondary battery, and methods for producing the negative electrode material, the negative electrode, and the battery.

A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

According to an embodiment, a method of manufacturing an active material is provided. The active material includes particles of a composite oxide of the general formula Ti.sub.1±xNb.sub.2±yM.sub.zO.sub.7−δ and a carbon-including phase. Here, 0≦x≦0.15, 0≦y≦0.3, 0.01<z≦0.2, and 0<δ<0.3. M is at least one of Mg, Fe, Ni, Co, W, Ta, and Mo. The manufacturing method includes preparing a mixture by mixing in a liquid, a compound including Ti, a compound including Nb, a carbon source, and a compound including an element M, obtaining a precursor from the mixture, and calcining the precursor. The calcination is performed in a mixed atmosphere including nitrogen and oxygen, or argon and oxygen, with an oxygen concentration of 5% to 15%.