Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.

Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

To provide a charged particle beam apparatus. The charged particle beam apparatus includes: a stage on which a sample is placed; a cleaner configured to remove a contaminant on the sample; and a stage control unit configured to adjust a relative positional relationship between the cleaner and the sample by moving the stage during use of the cleaner.

A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

An apparatus for cleaning a mask includes a chamber in which material deposition is performable on a substrate using the mask, the chamber including a transmission window through which light used in cleaning the mask within the chamber is irradiated into the chamber from outside thereof; within the chamber: a stage on which the substrate is disposed, the stage disposed in a plane defined by first and second directions crossing each other; and a material deposition unit from which a deposition material is provided to the substrate; and a light irradiation unit from which is provided the light used in cleaning the mask within the chamber. The light irradiation unit is disposed outside the chamber and irradiates the light into the chamber through the transmission window. The material deposition unit disposed within the chamber and the light irradiation unit disposed outside the chamber are reciprocally movable in the first direction.

Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.

A method for cleaning solar panels when snow, ice, or dust accumulates on the solar panels to reduce or eliminate the electrical power output from the solar panels. The method of cleaning includes selecting specific cleaning locations, on the array of solar panels, based primarily upon obstruction location and obstruction size differences. The method of cleaning also includes the incremental and sequential selection of the cleaning locations, and the incremental and sequential activation of cleaning devices within the selected cleaning locations. Additional groups of incrementally and sequentially activated cleaning devices may be powered, in whole or in part, by the prior solar panels that have been cleaned.

A system to perform multi-stage cleaning of material from a space suit worn by an astronaut in a deep space environment includes one or more discharge units installed external to an interior volume of a facility in the deep space environment. Each of the one or more discharge units releases one or more substances. The one or more substances includes water or air and the interior volume of the facility is defined by an interior hatch that is separated from an exterior hatch leading to the deep space environment by an airlock. One or more collection units installed external to the interior volume. Each collection unit traps released material that is released from a space suit based on the multi-stage cleaning to prevent the released material from entering the interior volume.

A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

Apparatus, methods, and systems use hydrogen radicals during a thermal annealing of film stacks to reduce or remove contaminants (such as phosphorus) from the film stacks. In one implementation, a method of processing a film stack of a substrate, includes conducting a thermal anneal operation on the film stack while the substrate is directly supported on a pedestal heater. The thermal anneal operation includes reducing one or more of a stress or a bow of the film stack. The method includes conducting a radical treatment operation on the film stack after the thermal anneal operation is conducted. The radical treatment operation includes exposing the film stack to hydrogen radicals, and removing contaminant particles from the film stack.