A glass composite includes a first glass member and a second glass member. The first glass member and the second glass member are at least partially connected with each other at the surfaces. The glass composite has a light transmittance not lower than 95% of the light transmittance of the one, with the lower light transmittance, of the first glass member and the second glass member.

A semiconductor processing device, comprising: a first chamber; a second chamber movable with respect to the first chamber portion between an open position and a closed position, a micro-chamber being formed between the first chamber portion and the second chamber portion when the second chamber portion is in the closed position with respect to the first chamber portion. The first chamber portion has a first channel formed on an inner wall surface of the first chamber portion facing the micro-chamber. The second chamber portion has a second channel formed on an inner wall surface of the second chamber portion facing the micro-chamber. When the second chamber portion is in the closed position with respect to the first chamber portion and a semiconductor wafer is accommodated in the micro-chamber, the first channel and the second channel communicate with each other and form an edge micro-processing space together, such that the outer edge of the semiconductor wafer accommodated in the micro-chamber extends into the edge micro-processing space. The edge micro-processing space is able to realize processing of the outer edge of the semiconductor wafer.

An object of the present invention is to provide a technique capable of removing oil regardless of a shape of a target object to which the oil is attached. Cutting oil is decomposed by irradiating the cutting oil with a plasma gas containing oxygen plasma. Oxygen radicals decompose a carbon element and a hydrogen element constituting the oil into carbon dioxide and water, respectively, to remove the oil. Therefore, paraffin and ester contained in the cutting oil can be decomposed by irradiating the cutting oil with the plasma gas containing oxygen plasma. Since the plasma gas can flow along a shape of a target object, the oil can be removed regardless of a shape of a portion of the target object to which the oil is attached.

A device for treating a surface with a dielectric harrier plasma, wherein the surface functions as a counterelectrode, has an electrically insulating housing and a housing head. A rotatable electrode connected to a high-voltage feed line is shielded by a dielectric and protrudes out of the housing head. The configuration has fundamentally unrestricted movement of the electrode over the surface to be treated in that the electrode has rotary bearing elements which are arranged in a center axis and a rotation axis is at an angle to the center axis.

An ion source comprises an ionising light source arranged to output ionising light for ionising a sample material, an electrode presenting an electrode surface for attracting the ionised sample material and upon which contaminant material is able to accumulate, and an ablating light source arranged to output an ablating light beam or pulse(s) for ablating material of the electrode from the electrode surface. The ablating light beam or pulse(s) does not include said ionising light. A reflector for reflecting the ablating light onto the electrode surface, therewith by a process of ablation a part of the electrode surface is removable from the electrode together with contaminant material when accumulated upon that part.

A glass composite includes a first glass member and a second glass member. The first glass member and the second glass member are at least partially connected with each other at the surfaces, and a contact interface is formed on the contacting position of the first glass member and the second glass member. The contact interface is visually observed to have no crevices; and when the glass composite is in contact with an acid solution, crevices are suitably formed in the glass composite at the contact interface.

An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.

Provided is a method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container. The method includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

Various embodiments comprise apparatuses and related methods for cleaning a substrate. In one embodiment, an apparatus includes a substrate holder to hold and rotate the substrate at various speeds. An optional inner shield and an optional outer shield, when in a closed position, surround the substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. At least one of a front-side laser and a back-side laser are arranged to clean one or both sides of the substrate and edges of the substrate substantially concurrently or independently by impinging a light onto at least one surface of the substrate. A gas flow, combined with a high rotational-speed of the shields and substrate, assists in removing effluents from the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.

A plasma treatment apparatus includes a plurality of plasma treatment chambers S2 to S6 in which a plasma treatment is performed on a base material X, a tray Y configured to hold the base material X in a standing posture, and a lift mechanism 10 configured to continuously convey the tray Y to the plurality of plasma treatment chambers S2 to S6 in order to continuously perform a plasma treatment even when the base material is difficult to wind on a roll.