The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I):

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wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

Conventional ozone water is still insufficient in the removal rate and cleaning ability of resist required in today's semiconductor manufacturing field, and it does not fully meet the expectation of further improvement in the effects of sterilization, deodorization, and cleaning in the fields such as cleaning of foodstuffs, cleaning of process equipment and tools, and cleaning of fingers, as well as in the fields such as deodorization, sterilization, and preservation of freshness of foodstuffs. The above-problem can be solved by defining the values of a plurality of specific production parameters in the production of ozone water into specific ranges.

A method for cleaning a substrate includes receiving a photomask substrate comprising a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface; applying a first mixture comprising a SC1 solution, a DI water and O.sub.3 to the photomask substrate to remove the conductive nanoparticles; and applying a DI water to rinse the photomask substrate. A removal rate of the conductive nanoparticles is greater than approximately 90%.

Embodiments of the present disclosure relate generally to systems and methods for combining ozone and water to deliver ozonated water in a rinse stream. The ozone rain pan finds particular use for rinsing food products traveling along a conveyor line with ozonated water.

Provided are: a method of producing heated ozone water, the method capable of producing heated ozone water having an extremely high ozone concentration by suppressing a reduction in the ozone concentration in high-concentration heated ozone water; heated ozone water; and a semiconductor wafer-cleaning liquid using the heated ozone water. A method of producing heated ozone water obtained by dissolving ozone in pure water, the method being characterized by including: adjusting a pH of the pure water to 3 or less by adding acid to the pure water; to obtain an acid water, dissolving an ozone gas in the acid water; and heating the pure water, the acid water or the ozone water, to 60 C. or more.

A method and an apparatus for cleaning a substrate are provided. The substrate (1010) comprises features (4034) of patterned structures. The method comprises placing the substrate on a substrate holder (1014) configured to rotate the substrate; applying cleaning liquid (1032) on the substrate; rotating the substrate by the substrate holder at a first rate when acoustic energy is being applied to the cleaning liquid by a transducer (1004); and rotating the substrate by the substrate holder at a second rate higher than the first rate when acoustic energy is not being applied to the cleaning liquid by the transducer.

A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

A pressure washing system uses two-stage ozonation. The pressure washing system includes a container for holding water; a first ozone supply for supplying ozone to ozonate the water in the container in a first ozonation process; a pressure pump configured to pressurize the ozonated water; a second ozone supply for supplying ozone to further ozonate the water to generate two-stage ozonated water in a second ozonation process that is different from the first ozonation process; and a sprayer configured to receive the two-stage ozonated water.