An apparatus, material and method for forming a brazing sheet has a composite braze liner layer of low melting point aluminum alloy and 4000 series braze liner. The low melting point layer of the composite braze liner facilitates low temperature brazing and decrease of the diffusion of magnesium from the core into the composite braze liner. The reduction of magnesium diffusion also lowers the formation of associated magnesium oxides at the braze joint interface that are resistant to removal by Nocolok flux, thereby facilitating the formation of good brazing joints through the use of low temperature controlled atmosphere brazing (CAB) and Nocolok flux. The apparatus also enables the production of brazing sheet materials with high strength and good corrosion property.

An apparatus, material and method for forming a brazing sheet has a composite braze liner layer of low melting point aluminum alloy and 4000 series braze liner. The low melting point layer of the composite braze liner facilitates low temperature brazing and decrease of the diffusion of magnesium from the core into the composite braze liner. The reduction of magnesium diffusion also lowers the formation of associated magnesium oxides at the braze joint interface that are resistant to removal by Nocolok flux, thereby facilitating the formation of good brazing joints through the use of low temperature controlled atmosphere brazing (CAB) and Nocolok flux. The apparatus also enables the production of brazing sheet materials with high strength and good corrosion property.

An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.

An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

A component including at least one joint, at which a joining connection to a further component is to be formed later, is provided. A joining element having a holding section is pressed into the component, and the joining element also has a functional section, by way of which at least one further function can be implemented. The holding section of the joining element is arranged in a passage hole, and the passage hole is widened in at least one edge region by an embossing. The holding section of the joining element is pressed into the passage hole and is connected to the hole wall in a force-fitting and/or form-fitting manner and engages in the embossing. A component combination of at least two components which includes such a component and a method for producing the component and the component combination are also provided.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.