A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.

A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.

A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

An example engine-driven power system includes: an engine; a generator configured to convert mechanical engine power to electrical power; first and second power subsystems configured to convert the mechanical or electrical power to first and second power outputs, wherein the first and second power subsystems are configurable to output the first and second power outputs simultaneously; an input device configured to control a load management priority, wherein the load management priority comprises at least one of an adjustable ranking, an adjustable balance, or bus voltage thresholds; and control circuitry configured to: control the first and second power subsystems to output the first and second power outputs based on first and second demands; and, in response to determining that a total demand exceeds a capacity, control the first or second power subsystems to reduce the power outputs or the demands based on the load management priority.

A semiconductor manufacturing apparatus includes; a component separating apparatus configured to separate a defective component from a substrate, a bump conditioning apparatus including an end mill cutter and receiving the substrate following separation of the defective component from the substrate, the bump conditioning apparatus being configured to cut a first connection bump using the end mill cutter to provide a conditioned first connection bump, and the first connection bump being exposed by separating the defective component from the substrate, and a component attaching apparatus configured to receive the substrate following provision of the conditioned first connection bump, and mount a new component including a second connection bump to the substrate by coupling the second connection bump and the conditioned first connection bump.

The high-efficiency soldering apparatus for a winding head of a flat-wire motor includes a support base, a solder tray, a solder spot isolation and limit plate, a shaft lever and a movable tray. The solder tray is provided at the center of the support base. The solder spot isolation and limit plate is provided on the solder tray. The shaft lever is provided on the support base. The movable tray is provided on the shaft lever. The movable tray is located above the solder tray. The movable tray moves vertically along the shaft lever. A stator is placed at the center of the movable tray, and a winding head of the stator extends below the movable tray.

A system and method of braze resistance spot welding of an aluminum component to a galvanized steel component involve providing an aluminum-side electrode having a first tip defining a rounded shape, providing a galvanized steel-side electrode having a second tip defining a flat shape, depositing a braze filler material between the aluminum and galvanized steel components at a desired location for a spot weld, performing a pre-heat including providing a first current across the electrodes for a first period such that the braze filler melts and removes a portion of a zinc coating from the galvanized steel component, and after performing the pre-heat, performing a spot weld between the aluminum and galvanized steel components by providing a second current across the electrodes for a second period such that the aluminum melts and the galvanized steel does not melt, wherein the second current is greater than the first current.