This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.

A method for producing a bonded body includes: a laminating step of forming a laminated body in which a first member and a second member are temporarily bonded to each other by providing a temporary bonding material including an organic material on at least one of a bonding surface of the first member and a bonding surface of the second member; and a bonding step of pressurizing and heating the laminated body in a laminating direction and bonding the first member and the second member to each other. In the bonding step, during a temperature increase process of heating the laminated body up to a predetermined bonding temperature, at least a pressurization load P2 at a decomposition temperature T.sub.D of the organic material included in the temporary bonding material is lower than a pressurization load P1 at the bonding temperature.

A steel joined body includes a plurality of steels joined together, the plurality of steels including a joint interface having a carbon concentration of 0.20 mass % or more and 2.10 mass % or less, and the steel joined body including a concentration gradient layer having a carbon concentration decreasing with distance from the joint interface.

A fixture assembly includes a first fixture portion, a second fixture portion that interfaces with the first fixture portion, and a sub-fixture movably mounted to the first fixture portion. A multiple of actuators selectively move the sub-fixture toward the second fixture portion. A method of manufacturing a fan blade includes deploying the sub-fixture from the first fixture portion to effectuate a peripheral diffusion bond to join the blade body and the cover of the fan blade.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

Exothermic welding molds, weld-metal containing cartridges for such molds, and methods of use are provided. The mold, cartridges, and methods can provide interaction between the cartridge's disk member with the mold, which allows the housing member to be withdrawn from the mold while leaving the disk member and weld-metal in place. The interaction can be a rotational restraint alone, a vertical restraint alone, or combinations thereof. Alternately, the interaction can be an outward pressure on the housing member and/or disk member, a shear force on the housing member and/or disk member, or combinations thereof. The outward pressure on the housing member and/or disk member can alternately be provided without interaction between the disk member and the mold, but rather by the simple application of an internal pressure to the cartridge. The internal pressure can be applied by squeezing the walls of the cartridge and/or by depressing a pusher member.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.

A method of joining a semiconductor die to a substrate includes: applying a solder preform to a metal region of the semiconductor die or to a metal region of the substrate, the solder preform having a maximum thickness of 30 μm and a lower melting point than both metal regions; forming a soldered joint between the metal region of the semiconductor die and the metal region of the substrate via a diffusion soldering process and without applying pressure directly to the die; and setting a soldering temperature of the diffusion soldering process so that the solder preform melts and fully reacts with the metal region of the semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the melting point of the preform and the soldering temperature.

A method for forming a metal flow module includes stacking together a first metal plate having opposing first and second major surfaces and one or more flow channels defined at least in part in the first major surface with a second metal plate having opposing first and second major surfaces, the plates stacked together with their respective first major surfaces facing each other and with a layer of flux positioned in between contacting portions of the respective first major surfaces defined as those portions of the respective first and second major surfaces which would be in contact absent the flux; then heating the plates together in a non-oxidizing atmosphere to thermally bond the contacting portions of the respective first major surfaces of the first and second metal plates. Resulting modules are also disclosed.

Processes of joining substrates via transient liquid phase bonding (TLPB). The processes include providing an interlayer of a low melting temperature phase (LTP) that includes Sn and Bi between and in contact with at least two substrates, and heating the substrates and the interlayer therebetween at a processing temperature equal to or above 200° C. such that the interlayer liquefies and the LTP interacts with high melting temperature phases (HTPs) of the substrates to yield isothermal solidification of the interlayer. The processing temperature is maintained for a duration sufficient for the interlayer to be completely consumed and a solid bond is formed between the substrates. Also provided are assemblies formed by the above noted processes.