A cell includes a membrane and an actuating layer. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other. The actuating layer is disposed on the first membrane subpart and the second membrane subpart. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.

A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.

A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

A micromechanical structure includes a fixing point, a silicon spring, and a movable part. The silicon spring is connected to the fixing point at a first end and to the movable part at a second end. At least one copper circuit trace is situated on the silicon spring and extends at least from the first end to the second end. The copper circuit trace has a layer structure including a plurality of contiguous copper layers.

A MEMS sensor is disclosed that includes dual pendulous proof masses comprised of sections of different thickness to allow simultaneous suppression of vertical and lateral thermal gradient-induced offsets in a MEMS sensor while still allowing for the normal operation of the accelerometer. In an embodiment, the structure and different sections of the MEMS sensor is realized using multiple polysilicon layers. In other embodiments, the structure and different thickness sections may be realized with other materials and processes. For example, plating, etching, or silicon-on-nothing (SON) processing.

A micro-electromechanical-system (MEMS) switch (1) is formed in a substrate (2) and includes a first RF signal line (3) and a second RF signal line (4), a deformable membrane (5), an activator (7) configured to deform the membrane (5), a substrate track, and a membrane track. The RF signal lines (3, 4) are connected by one of the membrane track and the substrate track. A membrane RF ground (9, 10) is integrated into the membrane (5), and the membrane RF ground is electrically connected to a substrate RF ground (11, 12, 3, 14), the membrane RF ground framing and being formed parallel to at least one among the membrane track (8) and the substrate track, such that the RF ground (9, 10) closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line (3) to the second RF signal line (4) when the switch is in the on state.

A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

An elastic device may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and at least one metalloid. A membrane may comprise a layer of silicon dioxide and a layer of amorphous metal. A MEMS device may comprise a layer of amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and a metalloid. In one example, the amorphous material comprises Tantalum (Ta), Tungsten (W), and Silicon (Si). In another example, the metalloid is Silicon. In yet another example, the refractory metals comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

A microelectromechanical accelerometer includes a support, at least one mass suspended by suspension means relative to the support and configured to move in the plane of the accelerometer, means for measuring the displacement of the seismic mass including at least one first vibrating beam of nanometric cross-section, and first electrostatic coupling means between the seismic mass and said at least one first vibrating beam configured to ensure a mechanical decoupling between the first vibrating beam and the seismic mass. At rest, the first electrostatic coupling means generates traction on the first vibrating beam, so that under the effect of acceleration the state of strain of the first vibrating beam is modified.

A sound producing cell includes a membrane and an actuating layer. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other. The actuating layer is disposed on the first membrane subpart and the second membrane subpart. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.