Provided is an oxygen absorber containing: a liquid oligomer of an unsaturated hydrocarbon; a transition metal catalyst; a carrier supporting the liquid oligomer of the unsaturated hydrocarbon and the transition metal catalyst; granular activated carbon; and crystalline thermoplastic resin particles. In an analysis curve derived by subjecting the crystalline thermoplastic resin particles and the granular activated carbon to a pyrolysis-gas chromatography analysis under a pyrolysis condition of 600? C., a ratio [Cref/Pref] of a peak area (Cref) of a decomposition product of a low molecular weight component of the crystalline thermoplastic resin particles adsorbed on the granular activated carbon per unit mass of the activated carbon to a peak area (Pref) of the crystalline thermoplastic resin particle decomposition product per unit mass of the crystalline thermoplastic resin particles is 0.20 or less.

Provided is an oxygen absorber containing: a liquid oligomer of an unsaturated hydrocarbon; a transition metal catalyst; a carrier supporting the liquid oligomer of the unsaturated hydrocarbon and the transition metal catalyst; granular activated carbon; and crystalline thermoplastic resin particles. In an analysis curve derived by subjecting the crystalline thermoplastic resin particles and the granular activated carbon to a pyrolysis-gas chromatography analysis under a pyrolysis condition of 600? C., a ratio [Cref/Pref] of a peak area (Cref) of a decomposition product of a low molecular weight component of the crystalline thermoplastic resin particles adsorbed on the granular activated carbon per unit mass of the activated carbon to a peak area (Pref) of the crystalline thermoplastic resin particle decomposition product per unit mass of the crystalline thermoplastic resin particles is 0.20 or less.

The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

A wet abatement system which can suppress the accumulation of foreign matters in a treatment gas line is proposed. There is provided a wet abatement system for detoxifying treatment gas by bringing the treatment gas into contact with liquid. The wet abatement system includes an inlet casing having an inlet port from which the treatment gas is let in and an outlet port provided below the inlet port and through which the treatment gas flows, and a liquid film forming device provided between the inlet port and the outlet port and configured to form a liquid film on an inner wall surface of the inlet casing. A heater configured to heat the inlet casing is embedded in an interior of a wall portion of the inlet casing, the wall portion constituting a portion situated above the liquid film forming device.

An apparatus for purifying a process gas containing at least one pollutant gas, having a reactor vessel, has a cylindrical region and a tapering region, and into which oxygen or an oxygen-containing gas can be introduced as a reaction gas into at least one gas inlet and can be discharged through at least one gas outlet. The at least one gas inlet introduces a defined volumetric flow of the reaction gas into the reactor vessel tangentially to a circumferential surface of the cylindrical region. The apparatus may have a pollutant gas inlet, which introduces a defined volumetric flow of the process gas containing at least one pollutant gas into the reactor vessel, so that the at least one pollutant gas and the reaction gas are mixed with each other in the direction of the gas outlet and chemically react with each other on their way through the reactor vessel.

An apparatus for purifying a process gas containing at least one pollutant gas, having a reactor vessel, has a cylindrical region and a tapering region, and into which oxygen or an oxygen-containing gas can be introduced as a reaction gas into at least one gas inlet and can be discharged through at least one gas outlet. The at least one gas inlet introduces a defined volumetric flow of the reaction gas into the reactor vessel tangentially to a circumferential surface of the cylindrical region. The apparatus may have a pollutant gas inlet, which introduces a defined volumetric flow of the process gas containing at least one pollutant gas into the reactor vessel, so that the at least one pollutant gas and the reaction gas are mixed with each other in the direction of the gas outlet and chemically react with each other on their way through the reactor vessel.

An exhaust purification system has a centrifuge filter, a first fan device, a second fan device, a pump, and an ozone generator. The centrifuge filter has a container having a waste gas treating area and a wastewater treating area. The first fan device communicates with and draws gas into the waste gas treating area. The second fan device communicates with and draws the gas out of the waste gas treating area. The pump communicates with and draws wastewater from the wastewater treating area. The ozone generator communicates with the pump and introduces ozone into the wastewater inside the pump. A part of the ozone dissolved in the wastewater is released to the waste gas treating area to react with the gas, and the other part of the ozone dissolved in the wastewater reacts with the wastewater.

Embodiments provide a method of storing a compound using a metal organic framework (MOF). The method includes contacting one or more MOFs with a fluid and sorbing one or more compounds, such as O2 and CH4. O2 and CH4 can be sorbed simultaneously or in series. The metal organic framework can be an M-soc-MOF, wherein M can include aluminum, iron, gallium, indium, vanadium, chromium, titanium, or scandium.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000 C. to 1600 C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.