A multi-slot gas wiping device for controlling the thickness of a molten metallic coating on a moving metal strip. The device including a nozzle system.

A method of controlling deposition of material from at least one plasma transferred wire arc (PTWA) torch within at least one bore includes: directing a fluid through a duct; and directing the fluid through a number of cannons N disposed adjacent and downstream from the duct. The fluid is directed through the duct and N cannons and past the PTWA torch while the PTWA torch is spraying downstream from N1 cannons.

A method of controlling deposition of material from at least one plasma transferred wire arc (PTWA) torch within at least one bore includes: directing a fluid through a duct; and directing the fluid through a number of cannons N disposed adjacent and downstream from the duct. The fluid is directed through the duct and N cannons and past the PTWA torch while the PTWA torch is spraying downstream from N1 cannons.

An apparatus for controlling deposition of material from a plasma transferred wire arc (PTWA) torch within a bore is provided. The apparatus includes a duct and a plurality of cannons. The duct includes a plurality of fluid passageways separated by cross-members. The plurality of cannons are disposed adjacent and downstream from the plurality of fluid passageways of the duct. The flow of fluid is simultaneously directed through all of the fluid passageways and the plurality of cannons and past the PTWA torch in the bore.

An apparatus for controlling deposition of material from a plasma transferred wire arc (PTWA) torch within a bore is provided. The apparatus includes a duct and a plurality of cannons. The duct includes a plurality of fluid passageways separated by cross-members. The plurality of cannons are disposed adjacent and downstream from the plurality of fluid passageways of the duct. The flow of fluid is simultaneously directed through all of the fluid passageways and the plurality of cannons and past the PTWA torch in the bore.

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.

Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.

Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.