An object is to obtain a composition capable of: forming a uniform film even by spray coating or even when the composition is applied in the form of ink for inkjet printing; and preventing light emission from a portion other than an ITO electrode surface when the film is mounted on an organic EL device and light is emitted from the device. A conductive polymer composition contains: a composite containing a π-conjugated polymer (A) and a polymer (B) shown by a general formula (1); H.sub.2O (D) for dispersing the composite; a water-soluble organic solvent (C); and a compound (E) shown by a general formula (2). The electric conductivity of a film with a thickness of 20 to 200 nm formed from the conductive polymer composition is less than 1.00E-05 S/cm.

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A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

The present invention provides a method for fabricating patterned cellulose nanocrystal (CNC) composite nanofibers and thin films for optical and electromagnetic sensor and actuator application, comprising the following steps of: selecting materials for fabricating patterned cellulose nanocrystal (CNC) composite nanofibers; and fabricating patterned CNCs composite nanofibers by incorporating secondary phases either during electrospinning or post-processing, wherein the secondary phases may include dielectrics, electrically or magnetically activated nanoparticles or polymers and biological cells mechanically reinforced by CNCs.

Method for coating a substrate with a coating material is described, in particular with a coating or photoresist, wherein said substrate is provided in said method. Said coating material is applied to said upper side of said substrate. A gas flow is generated, said gas flow being directed from said underside of said substrate to said upper side of said substrate, wherein said gas flow prevents a bead of said coating material forming on said edge of said upper side of said substrate or a previously existing bead is removed by means of said gas flow. In addition, a coating system is described.

A protective film applying apparatus includes a protective film forming and cleaning unit for forming a protective film on a surface of a wafer and cleaning the protective film away. A coverage state detector detects a coverage state of the protective film, and a controller determines whether or not the protective film has a film thickness falling within a predetermined range. If the controller decides that the thickness of the protective film does not fall in the predetermined range, the controller operates the protective film forming and cleaning unit to clean away the protective film, performs a pretreating process selected depending on the film thickness on the surface, and operates the protective film forming and cleaning unit to form a protective film again on the surface of the wafer.

The present invention relates to a method for producing highly doped polycrystalline semiconductor layers on a semiconductor substrate, wherein a first Si precursor composition comprising at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition comprising at least one second dopant is applied to one or more other regions of the surface of the semiconductor substrate, where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; and the coated regions of the surface of the semiconductor substrate are each converted, so as to form polycrystalline silicon from the Si precursor. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

A method of forming fine patterns includes the steps of forming a conductive layer on a base part, forming a sacrificial layer including an adhesive material on the conductive layer, the adhesive material including a catechol group, forming resist patterns on the sacrificial layer, and forming fine patterns by patterning the conductive layer using the resist patterns as a mask.

The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

The present invention relates to a composite separation membrane that is applicable to carbon dioxide separation and recovery processes. The composite separation membrane includes a coating layer composed of graphene oxide and a bile acid or its salt on a porous polymer support. The composite separation membrane of the present invention, which includes a coating layer composed of graphene oxide and a bile acid or its salt, has both high carbon dioxide permeability and high selectivity for carbon dioxide over nitrogen, hydrogen or methane gas, is free of surface defects, and maintains a stable structure without deterioration of its performance even after long-term use. Due to these advantages, the composite separation membrane of the present invention can be applied to industrial fields involving carbon dioxide separation and recovery processes. The present invention also relates to a method for manufacturing the composite separation membrane.

A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.