A method of calibrating a laser galvanometer to an XY stage by directing a defocused laser beam through a galvanometer and onto an XY stage and re-centering the laser beam at subsequent positions on the XY stage. Offsets are calculated based on the required movement of the galvanometer to recenter the laser beam at each of the positions on the XY stage. The laser beam may be defocused by focusing the laser beam at a distance Z both above or below the XY stage for each position and then calculating the offset for each position by averaging the values calculated at the focus distances Z above and below the XY stage. The laser beam may also be defocused by passing it through a pinhole.

A process for aligning a laser in a gear inspection system is disclosed. The method comprises fixing a gear for inspection within a gear inspection system and emitting a first signal from a laser to a point of interest of the gear. A reflection of the first signal is received as the first signal reflects off the point of interest of the gear. Based on the reflection of the first signal, an orientation of the laser is adjusted. Subsequently, a second signal is emitted from the laser to the point of interest of the gear, and a reflection of the second signal is received as the second signal reflects off the point of interest of the gear. Values corresponding to the orientation of the laser are stored based on the reflection of the second signal.

A process for aligning a laser in a gear inspection system is disclosed. The method comprises fixing a gear for inspection within a gear inspection system and emitting a first signal from a laser to a point of interest of the gear. A reflection of the first signal is received as the first signal reflects off the point of interest of the gear. Based on the reflection of the first signal, an orientation of the laser is adjusted. Subsequently, a second signal is emitted from the laser to the point of interest of the gear, and a reflection of the second signal is received as the second signal reflects off the point of interest of the gear. Values corresponding to the orientation of the laser are stored based on the reflection of the second signal.

A method of making adhesive tape has the steps of advancing a substrate band longitudinally in a machine direction from a supply to an array of laser units, cutting the band longitudinally with the laser units into a plurality of longitudinal strips, and then cutting each of the longitudinal strips longitudinally into a plurality of tapes. An adhesive is applied to a face of each of the tapes, and the tapes are wound up individually.

A method of making adhesive tape has the steps of advancing a substrate band longitudinally in a machine direction from a supply to an array of laser units, cutting the band longitudinally with the laser units into a plurality of longitudinal strips, and then cutting each of the longitudinal strips longitudinally into a plurality of tapes. An adhesive is applied to a face of each of the tapes, and the tapes are wound up individually.

Embodiments of systems and methods for dicing a bonded structure are provided. A method includes the following operations. First, a scan pattern can be determined for forming a series of ablation structures in the bonded structure. Relative positions between the series of ablation structures and a bonding interface of the bonded structure can then be determined. The bonding surface may be between a first wafer and a second wafer. At least one of one or more focal planes or a depth of focus of a laser beam may be determined based on the relative positions between the series of ablation structures and the bonding interface. Further, the laser beam may be determined. The laser beam has a series of pulsed lasers. Further, the laser beam may be moved in the bonded structure according to the scan pattern to form the series of ablation structures in the bonded structure.

Embodiments of systems and methods for dicing a bonded structure are provided. A method includes the following operations. First, a scan pattern can be determined for forming a series of ablation structures in the bonded structure. Relative positions between the series of ablation structures and a bonding interface of the bonded structure can then be determined. The bonding surface may be between a first wafer and a second wafer. At least one of one or more focal planes or a depth of focus of a laser beam may be determined based on the relative positions between the series of ablation structures and the bonding interface. Further, the laser beam may be determined. The laser beam has a series of pulsed lasers. Further, the laser beam may be moved in the bonded structure according to the scan pattern to form the series of ablation structures in the bonded structure.

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

-- A method for welding together two parts along a weld line using a welding system enabling an operator to remotely perform welding operations. The operator defines reference points on the parts to be welded and/or on the weld line to be followed. A general movement direction of the welding torch is defined from the reference points. A local frame of reference is defined relative to the general movement direction of the welding torch. The welding torch is automatically moved from a welding starting point in the general movement direction. A flow of movement instructions linked to actions of the operator on the human-machine interface is generated to move the welding torch away from the general movement direction to adapt a trajectory of the welding torch to an actual shape of the weld line. The welding torch is moved corresponding to the flow of instructions generated by the human-machine interface.