A method of operating a wire bonding machine is provided. The method includes: (a) operating a wire bonding machine during at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation, wherein a bonding force is applied during the operation of the wire bonding machine; and (b) monitoring an accuracy of the bonding force of the wire bonding machine during the at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation.

A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.

A wire guide module for an ultrasonic wire bonder, comprising a body made of a thermally stable metallic and/or ceramic material, wherein an elongated wire feed-through channel having a wire inlet opening and having a wire outlet opening is provided on the body, and comprising a guide tube provided in the wire feed-through channel. In addition, the invention relates to a thermosonic wire bonder having a wire guide module.

A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object, and a control unit configured to control at least the irradiation unit and the image capturing part. A plurality of lines is set in the object. The control unit performs a first process of irradiating the object with the laser light for each of the plurality of lines by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object.

A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

A processing apparatus includes a wafer table that supports a wafer, a frame table that supports an annular frame, a first tape pressure bonding unit that includes a first pressure bonding roller for executing pressure bonding of a tape to the annular frame, and a second tape pressure bonding unit that includes a second pressure bonding roller for executing pressure bonding of the tape of the tape-attached annular frame to a front surface or a back surface of the wafer. A first heating unit is disposed in one of or both the frame table and the first pressure bonding roller, while a second heating unit is disposed in one of or both the wafer table and the second pressure bonding roller.

An ultrasound horn is provided which vibrates a bonding tool, attached at a tip, in a plurality of directions with a simple structure. There is provided an ultrasound horn having: a longitudinal vibration generator; a horn portion; and a torsional vibration generator. The torsional vibration generator includes a body including a polygonal pillar portion, second layered elements in which a plurality of second piezoelectric elements are layered, and which are attached to side surfaces of the polygonal pillar portion, weights, and a pressure application ring which applies a pressure by pressing the second piezoelectric elements against the polygonal pillar portion via the weights.

Provided is a metal particle for adhesive paste. The metal particle may include a core including at least one metal; and a shell on at least one surface of the core and including at least one metal and nanoparticles. The metal particle may be a transient liquid phase particle and the at least one metal of the core may have a higher melting point than a melting point of the at least one metal of the shell. In addition, provided are a method of preparing the metal particle for adhesive paste, a composite bonding structure formed from the metal particle for adhesive paste, and a semiconductor device including the composite bonding structure.