B23K2101/40

PROCESSING APPARATUS USING LASER, METHOD OF PROCESSING A SUBSTRATE USING LASER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20230105004 · 2023-04-06 · ·

A processing apparatus using laser according to an embodiment includes a stage configured to hold a plurality of substrates on concentric circles and rotates around a center of the concentric circles, and a laser irradiation apparatus capable of moving in a radial direction of the concentric circles, the laser irradiation apparatus including a control unit configured to control an output of an infrared pulsed laser so that a plurality of laser spots adjacent to each other are separated from each other.

SUBSTRATE HAVING A METAL LAYER COMPRISING A MARKING
20230104665 · 2023-04-06 ·

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

PROCESSING APPARATUS AND PROCESSING METHOD
20220314373 · 2022-10-06 ·

A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers; and a controller. The controller controls an operation of forming the internal modification layers such that the internal modification layers are formed in a spiral shape from a diametrically outer side of the processing target object toward a diametrically inner side thereof, and such that an eccentric amount between the holder and the processing target object held by the holder in the forming of the internal modification layers toward the diametrically inner side of the processing target object becomes smaller than the eccentric amount in forming the internal modification layers toward the diametrically outer side of the processing target object.

Method and device for providing through-openings in a substrate and a substrate produced in said manner

A device for modifying a region of a substrate includes a laser radiation source for pulsed laser radiation. A transmissive medium having a higher intensity-dependent refraction index than air is arranged between a laser machining head and the substrate such that an individual pulse of the pulsed laser radiation from the laser machining head is deflected through the transmissive medium and across a thickness of the substrate from an original focal depth to a focal depth different from the original focal depth to modify the substrate along a beam axis of the laser radiation in a region of a recess or through-opening to be formed in the substrate without removing an amount of the substrate material necessary to form the recess or through-opening. A length between the focal depths is greater than and extends across the thickness of the substrate.

Method of manufacturing plate-shaped solder and manufacturing device

A method of manufacturing a plate-shaped solder according to the invention of the present application includes an aggregating step of aggregating a plurality of thread solders and a crimping step of crimping the plurality of aggregated thread solders to one another to form a plate-shaped solder. A manufacturing device of a plate-shaped solder according to the invention of the present application includes an aggregating portion for aggregating a plurality of thread solders and a crimping portion for crimping the plurality of thread solders to one another in the aggregating portion to form a plate-shaped solder.

LASER SYSTEM FOR DICING SEMICONDUCTOR STRUCTURE AND OPERATION METHOD THEREOF

A laser system for dicing a semiconductor structure is disclosed. The laser system includes a laser source and a laser energy adjusting unit. The laser source is configured to generate a laser. The laser energy adjusting unit is movably provided on a laser light path between the laser source and the semiconductor structure. The laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure based on a first determination that the laser source is focused on a first preset region of the semiconductor structure having a first material.

Device for manufacturing electric component and method for manufacturing electric component

An electric component manufacturing device includes a preheater that contacts and preheats a transported work, a melting heater that is downstream of the preheater in a transport direction of the work and contacts and heats the work at a temperature which is higher than a temperature of the preheater and at which a solder melts, a cooler that is downstream of the melting heater in the transport direction and contacts and cools the work, and a transporter that supports and transports the work to sequentially contact the preheater, the melting heater, and the cooler in this order. The transporter performs intermittent transport in which the work is transported from the preheater to the melting heater without stopping to contact both the preheater and the melting heater at the same time, and then the work stops on the melting heater.

WIRE BONDING STATE DETERMINATION METHOD AND WIRE BONDING STATE DETERMINATION DEVICE

Provided is a wire bonding state determination device which determines a bonding state between a pad and a wire after the wire is bonded to the pad. The wire bonding state determination device includes: a waveform detector which makes an incident wave incident to the wire, and detects a transmission waveform of the wire and a reflection waveform from a first bonding surface between the pad and the wire; and a bonding determination unit which determines the bonding state between the pad and the wire based on the transmission waveform and the reflection waveform detected by the waveform detector.

LASER PROCESSING SYSTEM AND METHOD THEREOF

A laser processing system according to an embodiment of the present invention includes: a laser unit emitting a laser beam; an optical unit disposed on a propagation path of the laser beam and modulating the incident laser beam into a Bessel beam; a stage on which a workpiece to be processed with the Bessel beam emitted from the optical unit is mounted; and a control unit for controlling the operations of the laser unit, the optical unit, and the stage, wherein the optical unit is configured to position the focus line of the emitted Bessel beam on the workpiece and to move the focus line positioned on the workpiece with a predetermined range.

LASER MACHINING DEVICE, WAFER PROCESSING SYSTEM, AND METHOD FOR CONTROLLING LASER MACHINING DEVICE
20230150054 · 2023-05-18 · ·

The laser machining device includes an observation image acquiring unit configured to repeatedly acquire an observation image of a machining spot of laser light emitted from a laser optical system to a street on a wafer while a machined groove is being formed, a luminance detector configured to detect a luminance of a plasma generated at the machining spot by emission of the laser light based on the observation image every time the observation image acquiring unit acquires the observation image, a correspondence information obtaining unit configured to obtain correspondence information indicating a correspondence relationship among the luminance, energy of the laser light and a machined state of the machined groove, and a machined state assessing unit configured to assess the machined state with reference to the correspondence information based on the luminance and known energy of the laser light every time the luminance detector detects the luminance.