A laser processing device includes a stage; a laser irradiation unit configured to irradiate the wafer with laser light; an image capturing unit configured to detect light propagated through a semiconductor substrate; and a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, deriving a position of a tip of an upper crack on a rear surface side, which is a crack extending from the modified region to the rear surface side of the semiconductor substrate, on the basis of a signal output from the image capturing unit having detected the light, and determining whether or not a crack reaching state has been realized on the basis of the position of the tip of the upper crack on the rear surface side.

A substrate having a first side and a second side opposite to the first side is processed by attaching a protective film to the first side and, after attachment, processing the substrate from the second side of the substrate. After processing from the second side, the second side is inspected for defects on the second side of the substrate. After inspection for defects, a support film is attached to the second side of the substrate. The protective film is removed from the first side of the substrate and, after removing the protective film, the first side of the substrate is inspected for defects on the first side of the substrate.

A bonding apparatus includes a body part; a vacuum hole disposed in the body part; a first protruding part protruding in a first direction from a first surface of the body part; a second protruding part protruding from the first surface of the body part in the first direction and spaced farther apart from a center of the first surface of the body part than the first protruding part in a second direction intersecting with the first direction; and a trench defined by the first surface of the body part and second surfaces of the first protruding part, the second surfaces protruding in the first direction from the first surface of the body part, and the trench being connected to the vacuum hole, wherein the second protruding part protrudes farther from the first surface of the body part in the first direction than the first protruding part.

There is provided a method of determining whether or not a result of a processing process of a laser processing apparatus is acceptable including a laser processing step of applying a laser beam to predetermined processing regions of a workpiece held on a chuck table, thereby performing a piercing process on the workpiece, an image capturing step of capturing images of all the processing regions while moving the image capturing unit and the workpiece relatively to each other, a detecting step of detecting regions where light is not transmitted through the workpiece among the processing regions in the image captured in the image capturing step, and a determining step of determining that the laser processing apparatus needs to be readjusted if the regions where light is not transmitted through the workpiece is equal to or more than the predetermined quantity.

A processing apparatus includes a chuck table including a plate-shaped holding component having a predetermined region transparent from one surface to the other surface, a processing unit that processes a workpiece, a first imaging unit disposed over the chuck table to acquire a normal image of the back surface side, and a second imaging unit disposed under the chuck table to acquire a normal image of the front surface side, a display device, and a control part that executes image processing of the normal image of either the back or front surface side to cause the normal image subjected to the image processing to be displayed on the display device in the state of being inverted in a predetermined direction in order to allow the orientation of the normal image of the back surface side to correspond with the orientation of the normal image of the front surface side.

An oven for assisting in conductive joint formation related to a workpiece is provided. The oven includes (a) a chamber, the chamber being at least partially defined by (i) an oven plate and (ii) a cover; (b) a material handling system for moving the workpiece through the oven in connection with a conductive joint formation process; and (c) at least one vacuum chamber within the chamber. The oven provides a stepped temperature profile including a plurality of temperature zones along the oven plate.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.

This inspection device includes: a laser irradiation unit, an imaging unit that takes an image of a wafer, a display that receives an input, and a control part, wherein the display receives an input of wafer processing information including information of the wafer and a laser processing target for the wafer, and the control part is configured to determine a recipe (a processing condition) including an irradiation condition of the laser beam by the laser irradiation unit based on the wafer processing information received through the display, to control the laser irradiation unit so that the wafer is irradiated with the laser beam according to the determined recipe, to acquire a laser processing result of the wafer due to the irradiation of the laser beam by controlling the imaging unit to take an image of the wafer, and to evaluate the recipe based on the laser processing result.

A substrate processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A separation facilitating layer and a laser absorption layer are formed on the second substrate in this order. The substrate processing method includes forming a separation modification layer by radiating laser beam to the laser absorption layer while generating a stress in the laser absorption layer; and separating the second substrate from the first substrate along a boundary between the second substrate and the separation facilitating layer.