A workpiece has a device area and a peripheral area surrounding the device area on a front surface side thereof. A workpiece grinding method includes a groove forming step of performing grinding feed of a grinding unit while a spindle is rotated, and grinding a predetermined area on a back surface side of the workpiece, the predetermined area corresponding to the device area, in a state in which a chuck table holding the workpiece is not rotated, thereby forming a groove on the back surface side, a groove removing step of starting rotation of the chuck table while the spindle is kept rotating, thereby grinding side walls of the groove and removing the groove, and a recess forming step of performing grinding feed of the grinding unit while the spindle and the chuck table are rotated, thereby grinding the predetermined area and forming a recess and a ring-shaped reinforcement part.

A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

A grinding apparatus includes a chuck table for holding a workpiece thereon, a table base supporting the chuck table, a grinding unit for grinding the workpiece held on the chuck table with a grinding wheel mounted on an end of a spindle, a load detecting unit for detecting a load applied from the grinding unit to the table base, a tilt adjustment unit supporting the table base thereon, for adjusting a tilt of the table base, a storage for storing a correlative relation between loads applied to the table base and changes in the tilt of the table base, and a controller for controlling the tilt adjustment unit based on the load detected by the load detecting unit and the correlative relation, to adjust the tilt of the table base so that a change in the tilt of the table base that corresponds to the detected load is cancelled out.

A device includes: a separating unit 10 which forms a weak layer WL in a semiconductor wafer WF supported by a base support unit BS to divide the wafer WF into a thinned wafer WF1 and a residual wafer WF2 with the weak layer WL as a boundary, and separates the wafer WF2 from the wafer WF1; a first transfer unit 20 which transfers the wafer WF1 from which the wafer WF2 is separated by the unit 10; a processing unit 30 which applies predetermined processing to the WF1 transferred by the unit 20; a second transfer unit 40 which transfers the wafer WF1 to which the predetermined processing is applied by the unit 30; and a reinforcing member pasting unit 50 which pastes a reinforcing member AS on the wafer WF1 transferred by the unit 40. The unit 20 and the unit 40 transfer the wafer WF1 with the unit BS.

A grinding method of grinding a first surface side of a wafer having an oxide film on the first surface includes a first grinding step of putting a grinding unit into grinding feeding while rotating a grinding wheel, rotating a chuck table holding under suction a second surface side at a first rotating speed, thereby causing lower surfaces of grindstones to break through the oxide film, then scraping off the oxide film by side surfaces of the grindstones, and forming a step in a circumferential direction of the wafer, a grinding unit raising step of spacing the grindstones from the wafer, and a second grinding step of putting the grinding unit into grinding feeding while rotating the grinding wheel to grind the wafer, in a state in which the chuck table holding under suction a second surface is rotated at a second rotating speed higher than the first rotating speed.

A grinding method of grinding a first surface side of a wafer having an oxide film on the first surface includes a first grinding step of putting a grinding unit into grinding feeding while rotating a grinding wheel, rotating a chuck table holding under suction a second surface side at a first rotating speed, thereby causing lower surfaces of grindstones to break through the oxide film, then scraping off the oxide film by side surfaces of the grindstones, and forming a step in a circumferential direction of the wafer, a grinding unit raising step of spacing the grindstones from the wafer, and a second grinding step of putting the grinding unit into grinding feeding while rotating the grinding wheel to grind the wafer, in a state in which the chuck table holding under suction a second surface is rotated at a second rotating speed higher than the first rotating speed.

There is provided a wafer grinding method of grinding a wafer having an orientation flat for indicating a crystal orientation in the condition where the wafer is held on a holding surface of a chuck table. The chuck table includes a suction holding portion for holding the wafer under suction and a frame portion surrounding the suction holding portion. The suction holding portion has a first cutout portion corresponding to the orientation flat, and the frame portion has a second cutout portion formed along the first cutout portion. The wafer grinding method includes a holding surface grinding step of grinding the holding surface by using abrasive members of a grinding wheel, and a wafer grinding step of grinding the wafer by using the abrasive members in the condition where the wafer is held on the holding surface ground by the abrasive members.

Provided is a substrate grinding device including: a work table; a first grinding wheel; and a second grinding wheel, wherein the work table is configured to rotate while sucking and holding a substrate, the first grinding wheel and the second grinding wheel are cup wheel type wheels, and provided at positions where the first grinding wheel and the second grinding wheel can be simultaneously in contact with the substrate rotating, the first grinding wheel and the second grinding wheel being configured to grind the substrate rotating, while rotating, and the work table is configured to be able to move a rotation center of the substrate from a first grinding position within a grinding range of the first grinding wheel to a second grinding position within a grinding range of the second grinding wheel.

A cleaning process of wafer polishing pad, the process includes providing a wafer polishing pad, performing a planarization process with the wafer polishing pad, leaving a residue on the wafer polishing pad after the planarization process, and performing a cleaning step with a cleaning nozzle to remove the residue, the cleaning nozzle comprises at least one Y-shaped pipe, one end of which is a water outlet, and the other two ends are respectively a water inlet and an air inlet, wherein a cleaning liquid flows from the water inlet to the water outlet, and a pressurized gas flows in from the air inlet.

Systems and methods for treating concrete, which includes the steps of wetting a surface of concrete with colloidal silica, allowing time for the colloidal silica to penetrate the concrete surface, and cutting the surface of the concrete with a bladed or segmented tool wherein the longitudinal blade or edge portion is positioned approximately at an angle between 30 degrees and 90 degrees relative to the surface of the concrete.