Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point.

A polishing apparatus polishes a periphery of a substrate by bringing a polishing tool into sliding contact with the substrate. The polishing apparatus includes a substrate-holding mechanism configured to hold a substrate and rotate the substrate, a polishing mechanism configured to press a polishing tool against a periphery of the substrate so as to polish the periphery, and a periphery-supporting mechanism configured to support the periphery of the substrate by a fluid. The periphery-supporting mechanism is configured to support a surface of the substrate from an opposite side or the same side of the periphery of the substrate.

Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.

A polishing method includes rotating a substrate, performing a first polishing process of pressing a polishing tape against an edge portion of the substrate by a pressing member, with a portion of the polishing tape projecting from the pressing member inwardly in a radial direction of the substrate, to polish the edge portion of the substrate and bend the portion of the polishing tape along the pressing member, and performing a second polishing process of pressing the bent portion of the polishing tape inwardly in the radial direction of the substrate by the pressing member to further polish the edge portion of the substrate.

This invention provides a method for forming a wafer comprising forming a silicon substrate, and then performing rapid thermal annealing to the substrate to form a passivation layer. The passivation layer reduces the surface roughness of the silicon substrate. During the formation of a gate oxide layer or an interface, deuterium can diffuse from the substrate and combine with dangling bonds of the interface to form a stable structure, thereby carrier penetration can be prevented and device properties can be enhanced.

A polishing apparatus is used for polishing a substrate such as a semiconductor wafer. The polishing apparatus includes a substrate holder to hold a substrate and to rotate the substrate, a pressing member configured to press a polishing tool against the substrate and to polish the substrate, a pressing force control mechanism configured to control a pressing force of the pressing member, and a polishing position limiting mechanism configured to limit a polishing position of the pressing member. A polishing tape or a fixed abrasive is used as the polishing tool.

An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool.

A method for cutting a display panel is provided by the disclosure. The display panel includes a substrate, a cover plate provided opposite to the substrate, multiple display components sandwiched between the substrate and the cover plate, and encapsulation glue sandwiched between the substrate and the cover plate and surrounding the multiple display components. The method includes: forming multiple display modules by cutting the substrate and the cover plate of the display panel at a position between adjacent display components; and edging a display module obtained through the cutting with an edging machine by a distance from an edge of the display module to inward of the encapsulation glue, until the encapsulation glue is grinded to a preset width. A design of slim bezel can be achieved for the display panel with high accuracy by the method for cutting the display panel according to the disclosure.

A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Systems and methods for angle polishing of the end faces of a plurality of optical connectors are provided. Systems are provided that include a connector defining a longitudinal axis, and at least two ferrules mounted with respect to the connector and arranged in a side-by-side orientation. The end faces of the connectors are movable relative to the connector and such movement facilitates lateral orientation of the angle polished end faces of the ferrules relative to the connector when in the mating position. Various mechanisms and methods for facilitating movement of the ferrules relative to the connector are disclosed to achieve the desired lateral polish orientation of the ferrule end faces.