The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

A wafer is produced from a compound single crystal ingot having end surface. A separation plane is formed by setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface. The depth corresponds to the thickness of the wafer to be produced. The laser beam is applied to the end surface to form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming the separation plane. The ingot has first atoms having a larger atomic weight and second atoms having a smaller atomic weight, and the end surface of the ingot is set as a polar plane where the second atoms are arranged in forming the separation plane. After producing the wafer from the ingot, the first end surface is ground to be flattened.

Provided is a cutting method for a tube glass, including: a heating step of heating a preset cut portion (CP) of the tube glass (G2) by radiating laser light (L11) to the preset cut portion (CP); an inner crack region forming step of forming an inner crack region (C1) including one or a plurality of cracks through multiphoton absorption that occurs in an irradiation region of laser light (L12) by radiating the laser light (L12) having a focal point adjusted to an inside of the preset cut portion (CP); and a cooling step of cooling the preset cut portion (CP), to thereby cause the cracks to propagate in the inside of the preset cut portion (CP).

With a method of cutting a tube glass (G1) according to the present invention, the tube glass (G1) is irradiated with laser light (L) having a focal point (F) adjusted to an inside of the tube glass (G1), to thereby form an inner crack region (C1) including one or more cracks in a portion of the tube glass (G1) in a circumferential direction of the tube glass (G1) through multiphoton absorption that occurs in an irradiation region of the laser light (L). Then, in the tube glass (G1), there is generated a stress that urges the one or more cracks in the inner crack region (C1) to propagate in the circumferential direction of the tube glass (G1) to cause the one or more cracks to propagate throughout an entire circumference of the tube glass (G1), to thereby cut the tube glass (G1).

The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).

A method produces a structured element by material-removing machining of a workpiece with pulsed laser radiation, the workpiece consisting of a workpiece material transparent to the laser radiation, the laser radiation being radiated into the workpiece from a radiation entry side and, in an area of a rear side of the workpiece located opposite the radiation entry side, being focused within the workpiece in a focus area such that workpiece material is removed in the focus area by multi-photon absorption, and includes bringing the rear side of the workpiece, at least in a machining area currently being machined around the focus area, into contact with a free-flowing liquid transparent to the laser radiation, wherein at least some of the liquid is set to flow in a direction towards the machining area such that the liquid flows into the machining area at an acute angle of 60 or less to the rear side.

A method is described or processing diamonds, either natural or artificially produced, by using a laser beam with minimal power output. The laser wavelength is fitted to the peak absorption wavelength of diamond, such as a helium-silver laser with a wavelength of 224 nm.

The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).

Method and apparatus for heat treating and processing an edge of a large thin glass sheet used for a liquid crystal TV or the like. The method for processing an edge of a glass substrate according to the present invention is characterized by cutting an edge of a glass substrate by bringing a heated member into contact with the edge of the glass substrate that is cooled, and then moving the heated member. According to the present invention, provided is a new method of removing the edge of glass in a strip shape without producing dust. Also, according to the method of the present invention, since it is unnecessary to heat the glass at a high temperature, a large furnace is not necessary. Further, since a post-processing operation such as preheating or annealing is unnecessary, the manufacturing process is highly simplified.

A heat chamfering method for a glass panel includes bringing a heater into contact with an edge of a glass panel by causing the heater to approach a chamfering start point. heat-chamfering the edge by moving the heater from the chamfering start point to a chamfering end point along a chamfering line. and bringing the heater into non-contact with the glass panel by causing the heater to depart from the chamfering end point. The heat-chamfering may include maintaining contact pressure between the heater moving along the chamfering line and the glass panel within a predetermined range of change. In the approaching. an angle defined by a chamfering start point approach line and the chamfering line at the chamfering start point ranges from 155 to 175. In the departure, an angle defined by the chamfering line and a chamfering end point departure line ranges from 155 to 175.