A method of processing a SiC ingot includes a resistance value measuring step of measuring an electric resistance value of an end face of the SiC ingot, a laser beam output adjusting step of adjusting the output of a laser beam according to the electric resistance value measured in the resistance value measuring step, and a peeling belt forming step in which, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in an X-axis direction to form a belt-shaped peeling belt in the inside of the SiC ingot.

A method is provided, comprising creating at least one crack at a point on an edge of a stack of at least a substrate and a superstrate; propagating the crack along the periphery; and moving the superstrate relative to the substrate to complete separation of the superstrate from the substrate.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first CO.sub.2 laser beam the coating via a CO.sub.2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second CO.sub.2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO.sub.2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.

A dividing device divides a wafer from an ingot by slicing the ingot by using a dividing layer which is formed by relatively moving a laser beam to a predetermined depth of the ingot from one of both end faces of the ingot. The dividing device for a wafer includes: first fixing part that fixes the other of the both end faces of the ingot; second fixing part that is arranged on a first central axis line of the ingot so as to face the first fixing part and fixes the one of the both end faces of the ingot; and tension part that apply a tensile force to the ingot via the first and second fixing parts. The tension part rotates one end of the dividing layer with another end as a fulcrum so as to generate moments for slicing the ingot with the dividing layer as a boundary.

A method of manufacturing ceramic chips according to one aspect of the present disclosure includes: (A) forming a plurality of dicing trenches on a ceramic wafer; (B) removing a surface in which the dicing trenches are formed by as much as a predetermined thickness to eliminate a rough surface, which is formed on an outer side of each of the dicing trenches when the dicing trenches are formed; and (C) removing a surface opposite to the surface in which the dicing trenches are formed by as much as a predetermined thickness so that the wafer is individualized into a plurality of ceramic chips.

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A method for producing solid layers includes: providing a solid for separating at least one solid layer; fixing an accommodating layer for holding the solid layer on the solid, wherein the accommodating layer has a multiplicity of holes for conducting a liquid, wherein the accommodating layer is fixed on the solid by means of a connecting layer; and thermal loading of the accommodating layer for mechanical generation of stresses in the solid. A crack in the solid propagates along a detachment plane due to the stresses. The solid layer is separated from the solid by means of the crack. The accommodating layer includes at least one polymer material, and the polymer material undergoes a glass transition at a temperature lower than 0 C.

A cutter edge is pressed against a brittle-material substrate so that a protruding portion of the cutter edge is positioned between a first edge of the brittle-material substrate and a side portion of the cutter edge and that a side portion of the cutter edge is positioned between the protruding portion of the cutter edge and a second edge of the brittle-material substrate. A scribe line is formed by a scratch between a first position closer to the first edge of the first and second edges and a second position closer to the second edge of the first and second edges. After the formation of the scribe line, a crack is extended in a thickness direction from the second position toward the first position along the scribe line, thus forming a crack line.