A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

A bezel making device is provided which may be used for the manufacture of fancy bezels, castellated bezels, serrated bezels, and other jewelry structures using a bezel material. In some embodiments, the device may include a front plate and a back plate. The front plate may have a first crenellated edge, the first crenellated edge having a plurality of first merlons and first crenels, in which each first merlon of the plurality of first merlons and first crenels is separated from an adjacent first merlon by a first crenel. The back plate may have a second merlon (preferably of a second crenellated edge having a plurality of second merlons and second crenels) and the bezel material may be held between the front plate and back plate by tensioning the bezel material between the plurality of first merlons and first crenels and the one or more second merlons.

A workpiece processing method is provided for processing a workpiece including a device region, a peripheral surplus region surrounding the device region, and key patterns being arranged on a top surface side in the peripheral surplus region so as to correspond to a plurality of planned dividing lines, the method including: a resin sheet sticking step of sticking a resin sheet to the top surface side of the workpiece, and transferring the key patterns onto the resin sheet; a peripheral surplus region removing step of dividing the peripheral surplus region from the workpiece, and peeling off the peripheral surplus region from the resin sheet; and a device region processing step of identifying a position of at least one planned dividing line by using, as marks, traces of the key patterns exposed in the peripheral surplus region removing step, and processing the device region along the plurality of planned dividing lines.

The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is difficult to control in diameter and easy to twinning/ poly in the growth process, a barreling process which may grind and remove a large amount of InP materials is abandoned, the crystal bar is multi-wire cut into a wafer, and then the substrate wafer which is available in the crystal direction close to the standard size is cut from the wafer to the maximum extent, so that the wafer output can be greatly increased, and the material loss and the waste can be reduced.

A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

A method and device for simulating a production duration of a silicon-wafer slicer, including: constructing a slicer simulating model, wherein the slicer simulating model includes process-step data of the slicer, and the process-step data include: a loading process step, a cutting process step, a discharging process step, a rinsing process step, a waiting process step, a broken-line replacing process step, a guide-pulley replacing process step, a home-roll replacing process step and a paying-off-wheel replacing process step; in the slicer simulating model, according to a predetermined rule, obtaining a process-step-to-be-executed datum; according to historical data, for the process-step-to-be-executed datum, assigning duration data that individually correspond to the process-step-to-be-executed data, wherein the historical data include: historical duration data that individually correspond to the process-step data of the slicer; and executing sequentially the process steps in the process-step-to-be-executed data, and obtaining a sum of the duration data of the process steps.

A processing method for a workpiece includes a cutting step of cutting the workpiece along streets by a cutting blade having a V-shaped tip end, to form V grooves of which shallower parts are wider than deeper parts, and a cleaning step of cleaning a back surface of the workpiece with cleaning water, after the cutting step is carried out.

An edge alignment method includes (a) calculating coordinates of points having a possibility of corresponding to an edge of the workpiece, (b) forming an approximate circle by using a least squares method on all the coordinates, (c) calculating deviations between the approximate circle and respective ones of all the points, and if plural ones of the points have deviations greater than or equal to a preset threshold, respectively, then determining the point, the deviation of which is greatest, to be a false detection position, and excluding from consideration candidates the point determined to be the false detection position, and (d) estimating a position of the edge of the workpiece from the coordinates of three or more of the points still remaining without exclusion, and based on the estimated position of the edge, deriving a machining area at the outer peripheral portion of the workpiece.

A carrier tray includes a housing, an ingot accommodating recess that accommodates a semiconductor ingot, and a wafer accommodating recess that accommodates a wafer. The housing has an upper wall, a lower wall, a pair of side walls connecting the upper wall and the lower wall to each other, and a tunnel defined by the upper wall, the lower wall, and the pair of side walls. A plurality of levers each of which has a point of application projecting from a bottom surface of the ingot accommodating recess, a point of action projecting from a side surface of the ingot accommodating recess, and a fulcrum formed between the point of application and the point of action are each attached to the housing so as to be rotatable around the fulcrum.

A processing apparatus includes a table base to which a jig table is removably secured, a cutting unit, a moving assembly for moving the table base between a processing area and a mounting/dismounting area, and a delivery assembly for delivering the jig table from a temporary rest area onto the table base while applying a negative pressure to a second suction channel of the jig table. The delivery assembly includes a pair of grippers for gripping both sides of the jig table, a suction pipe connected to the second suction channel of the jig table that is gripped by the grippers, and a lifting and lowering unit for positioning the suction pipe selectively in an operative position where the suction pipe is connected to the second suction channel and a lifted position where the suction pipe is spaced from the second suction channel.