B32B15/018

Electrode material for thermal-fuse movable electrode

The present invention is an electrode material constituting a movable electrode of a thermal fuse, having a five-layer clad structure including a core material layer, an intermediate layer formed on the both sides of the core material layer, and a surface layer formed on the intermediate layer, wherein the core material layer includes Cu, the intermediate layer includes an AgCu-based alloy, the surface layer includes an AgCuO-based oxide-dispersed strengthened alloy, and the ratio of the thickness of the intermediate layer to the thickness of the surface layer (intermediate layer/surface layer) is 0.2 or more and 1.0 or less. This electrode material can be manufactured by partially internally oxidizing a three-layer clad material in which plate materials made of an AgCu-based alloy are clad-jointed to both sides of the plate material made of Cu.

Methods of forming metallic glass multilayers

The disclosure is directed to methods of forming metallic glass multilayers by depositing a liquid layer of a metallic glass forming alloy over a metallic glass layer, and to multilayered metallic glass articles produced using such methods.

COMPOSITE MATERIAL, METHOD FOR THE PRODUCTION OF A COMPOSITE MATERIAL, AND A DISCHARGE COMPONENT INCLUDING A COMPOSITE MATERIAL

A composite material includes a first metallic material component and a second metallic material component. The first material component is different from the second material component. The second material component is mixed with the first material component.

BONDING WIRE FOR SEMICONDUCTOR DEVICE
20180374815 · 2018-12-27 ·

A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 m in thickness, and the Cu surface layer is 0.0005 to 0.0070 m in thickness.

Preferably oriented nanotwinned Au film, method of preparing the same, and bonding structure comprising the same

The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Laminate and method for producing same

A laminate including a metallic base material, a first nickel-containing plating film layer formed on the metallic base material, a gold plating film layer formed on the first nickel-containing plating film layer, a second nickel-containing plating film layer formed on the gold plating film layer, and a nickel fluoride film layer formed on the second nickel-containing plating film layer. Also disclosed is a method for producing the laminate as well as a constituent member of a semiconductor production device including the laminate.

Bonding wire for semiconductor device

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

JOINT STRUCTURE AND MANUFACTURING METHOD THEREOF

A joint structure and a manufacturing method thereof are provided which can improve heat dissipation properties and which can inhibit damages. A joint structure includes: an insulating substrate and a heat dissipation substrate; a first silver particle layer that is joined to the insulating substrate and that includes a plurality of first silver nanoparticles which are joined; a second silver particle layer that is joined to the heat dissipation substrate and that includes a plurality of second silver nanoparticles which are joined; and a copper particle layer that interposes the first silver particle layer and the second silver particle layer, that is joined to the first silver particle layer and the second silver particle layer, and that includes a plurality of copper nanoparticles which are joined. A particle size of the copper nanoparticles is larger than particle size of both the first silver nanoparticles and the second silver nanoparticles.

Materials for near field transducers and near field transducers containing same

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.