An electric contact for preventing a terminal of an electric part and the electric contact from sticking to each other after a continuity test to improve the durability of the electric contact; and a socket for electric parts using the electric contact. The electric contact of this invention includes a first layer made from a material into which Sn melts and diffuses upon application of heat; and a second layer formed on the outer side of the first layer and made from a material lower in the rate at which Sn melts and diffuses upon application of heat than the first layer.

According to various embodiments of the present disclosure, a metal unit may include: a core metal layer that is mainly composed of iron (Fe); and an outer layer formed on at least one face of the core metal layer, and bonded to solder so as to be attached to a printed circuit board. The metal unit and an electronic device including the same may be variously implemented according to embodiments.

An electric contact pair includes a first electric contact, and a second electric contact to be brought into electrical contact with the first electric contact. The first electric contact includes a first plating film made of Ag or a Ag alloy on its outermost surface, and the second electric contact includes a second plating film made of Rh or a Rh alloy on its outermost surface. The first plating film maybe layered on a first conductive base material, the second plating film maybe layered on a second conductive base material, and the first conductive base material and the second conductive base material are made of copper or a copper alloy, or aluminum or an aluminum alloy. A connector terminal pair includes a first terminal including the first electric contact, and a second terminal including the second electric contact.

The invention relates to a silver solder paste and to a silver solder paste containing copper, which can be used to join metal or metalized substrates, in particular copper substrates, without pressure at low temperatures. The silver solder according to the invention contains a metal-organic silver complex as a precursor, which forms silver nanoparticles only upon being heated and which forms a silver-metal molten phase over a temperature range of 20 to 40 units upon being heated further, which silver-metal molten phase can be used as a process window for joining already starting at 150 C., preferably starting at approximately 200 C.

A composition comprising a plurality of coated metal particles with a metal core surrounded by nested shells formed by an electrically conductive layer and by a barrier layer, at least one of the shells being formed by electroless plating. The invention also comprises a method of producing such compositions as well as the use of the composition in, for example, crystalline-silicon solar cell devices having contact structures formed on one or more surfaces of a solar cell device, such as those used in back contact solar cell devices or emitter wrap through (EWT) solar cell devices.

A device is specified, said device comprising a first component (1), a second component (2), and a connecting component (3) comprising at least a first region (31) and at least a second region (32). The composition of the first region (31) differs from the composition of the second region (32). The connecting component (3) is arranged between the first component (1) and the second component (2). The connecting component (3) comprises different kinds of metals, the first region (31) of the connecting component (3) comprises a first metal (41), and the concentration of the first metal (41) is greater in the first region (31) than the concentration of the first metal (41) in the second region (32).

This seal ring (1) is made of a clad material in which a base material layer (10) and a brazing filler metal layer (11) arranged on a first surface (10b) of the base material layer are bonded to each other, and a side brazing filler metal portion (11f) of the brazing filler metal layer covering a side surface (10c) of the base material layer is removed.

Provided is a heat sink having a clad structure of CoMo composite materials and Cu materials, satisfying high heat-sink properties required of the heat sink for use in a semiconductor package with a frame on which a high-output and small-sized semiconductor is mounted, and preventing, when applied to the semiconductor package with a frame, crack of the frame due to local stress concentration. The heat sink has three or more Cu layers and two or more CuMo composite layers alternately stacked in a thickness direction so that the Cu layers are outermost layers on both sides thereof, the Cu layers as the outermost layers each having a thickness t.sub.1 of 40 m or more, the heat sink satisfying 0.06t.sub.1/T0.27 (where T: heat sink thickness) and t.sub.2/T0.36/[(total number of layers1)/2] (where t.sub.2: CuMo composite layer thickness, the total number of layers: sum of numbers of Cu layers and CuMo composite layers).

There is provided a metal-coated Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire includes a core wire of Al or Al alloy, and a coating layer of Ag, Au or an alloy containing them formed on the outer periphery of the core wire, and the bonding wire is characterized in that when measuring crystal orientations on a cross-section of the core wire in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. Preferably, the surface roughness of the wire is 2 m or less in terms of Rz.

A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.