The present technology relates to a solid-state imaging device that can reduce the number of steps and enhance mechanical strength, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a laminate including a first semiconductor substrate having a pixel region and at least one second semiconductor substrate having a logic circuit, the at least one second semiconductor substrate being bonded to the first semiconductor substrate such that the first semiconductor substrate becomes an uppermost layer, and a penetration connecting portion that penetrates from the first semiconductor substrate into the second semiconductor substrate and connects a first wiring layer formed in the first semiconductor substrate to a second wiring layer formed in the second semiconductor substrate. The first wiring layer is formed with Al or Cu. The present technology is applicable, for example, to a back-surface irradiation type CMOS image sensor.

A wafer-level lens structure for contact image sensor (CIS) module includes a printed circuit board (PCB) and an image sensor electrically connected to the PCB and comprising a circuit area and a light sensitive area. The light sensitive area comprises an optoelectronic conversion array, a first lens array arranged on the optoelectronic conversion array and comprising a plurality of first cover lens, each of first cover lens having a first curved face to focus the external image light to the optoelectronic conversion array, and an aperture array arranged on the first lens array and comprising a plurality of apertures to expose the first curved face, the aperture array controlling a light amount passing through the cover lens. The first curved face of the cover lens has such a curvature that a predetermined focus point can be achieved by the plurality of first cover lens.

A device includes a first integrated circuit substrate including a plurality of first metal layers interconnected by first vias and a second integrated circuit substrate on the first integrated circuit substrate and including second metal layers interconnected by second vias. An insulation layer is disposed between the first and second substrates and a connection region is disposed in the insulation layer and electrically connects a first one of the first metal layers to a first one of the second metal layers. The device further includes a bonding pad on the second substrate and a through via extending from the bonding pad and into the second to contact a second one of the second metal layers. The through via is positioned so as to not overlap at least one of the first vias, the second vias and the connection region. Methods of fabricating such device are also described.

An array imaging module includes a molded photosensitive assembly which includes a supporting member, at least a circuit board, at least two photosensitive units, at least two lead wires, and a mold sealer. The photosensitive units are coupled at the chip coupling area of the circuit board. The lead wires are electrically connected the photosensitive units at the chip coupling area of the circuit board. The mold sealer includes a main mold body and has two optical windows. When the main mold body is formed, the lead wires, the circuit board and the photosensitive units are sealed and molded by the main mold body of the mold sealer, such that after the main mold body is formed, the main mold body and at least a portion of the circuit board are integrally formed together at a position that the photosensitive units are aligned with the optical windows respectively.

An image sensor capable of capturing an image formed by a lens includes a substrate and a bonding wire. The substrate has a pixel array and a bonding pad on a top surface of the substrate between the pixel array and a substrate edge. The bonding wire is electrically connected to the bonding pad and has a region forming a non-zero angle with respect to the substrate top surface. The non-zero angle is in at least one of a lower and an upper angular range for minimizing reflection of incident light on the region from reaching the image sensor. The lower angular range is selected such that the region reflects the incident light away from the pixel array toward a plane including the lens. The upper angular range is selected such that the region reflects the incident light to a clearance between the bonding pad and the pixel array.

A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element; and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.

A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.

The present technology relates to techniques of preventing intrusion of moisture into a chip.

Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.