An image capturing element according to the present disclosure includes a pixel array formed by a plurality of pixels arranged in an array on a substrate, each of the plurality of pixels including a photoelectric conversion element, a transparent layer formed on the pixel array, and a spectroscopic element array formed by a plurality of spectroscopic elements arranged in an array, and each of the plurality of spectroscopic elements is at a position corresponding to one of the plurality of spectroscopic elements inside or on the transparent layer. Each of the plurality of spectroscopic elements includes a plurality of microstructures formed from a material having a refractive index higher than a refractive index of the transparent layer. The plurality of microstructures have a microstructure pattern. Each of the plurality of spectroscopic elements separates incident light into deflected light beams having different propagation directions according to the wavelength.

The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

The present application is directed to a semiconductor package including a package substrate, a connection substrate disposed on the package substrate, a first semiconductor chip disposed on the connection substrate, a second semiconductor chip disposed on the connection substrate and spaced apart from the first semiconductor chip, a molding layer disposed on the package substrate and at least partially covering the connection substrate, the first semiconductor chip, and the second semiconductor chip, and an optical guide member that extends into the molding layer and is disposed on the second semiconductor chip.

An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

An image sensor includes a plurality of pixels arranged in a matrix form, photodiodes for the respective pixels, the photodiodes within a semiconductor substrate having a first surface to which light is incident and a second surface that faces away from the first surface, micro lenses over the first surface of the semiconductor substrate and configured to concentrate the light, color filters between the semiconductor substrate and the micro lenses, and an optical path changing member configured to change a path of at least a portion of the light when the light travels toward the photodiodes through the micro lenses. The optical path changing member having a curved surface being concave or convex on the first surface of the semiconductor substrate.

There is provided an image sensor including a substrate, a plurality of pixel groups respectively including a plurality of photodiodes provided in the substrate, a pixel isolation pattern provided between the plurality of photodiodes in the substrate, an auxiliary isolation pattern provided to extend inside from a surface of the substrate, and a micro lens provided on the surface of the substrate. The pixel isolation pattern includes an outer isolation pattern provided between the plurality of pixel groups and an inner isolation pattern provided between the plurality of photodiodes within the plurality of pixel group, and the auxiliary isolation pattern is provided between the outer isolation pattern and the inner isolation pattern that are spaced apart from each other or between a plurality of inner isolation patterns that are spaced apart from each other.

A plurality of microlenses arranged in a matrix in first and second directions orthogonal to each other; a plurality of photoelectric conversion portions, provided for each microlens of at least some of the plurality of microlenses, that perform photoelectric conversion on light that has entered the photoelectric conversion portions via the respective microlens; and a readout unit that sequentially reads out signals from the plurality of photoelectric conversion units with the first direction being a main scanning direction and the second direction being a sub-scanning direction are provided. The plurality of photoelectric conversion portions are arranged in at least one of the first and second directions, and an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the first direction is higher than an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the second direction.

There is provided a photodetection device capable of widening a dynamic range without increasing the number of photoelectric converters. The photodetection device according to an embodiment of the present disclosure includes a plurality of photoelectric converters arranged in one of pixels and configured to photoelectrically convert incident light. The plurality of photoelectric converters includes at least one first photoelectric converter and at least one second photoelectric converter having a lower sensitivity to the incident light than the first photoelectric converter.

An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

A first substrate having a plurality of photoelectric transducers formed on the first substrate, a second substrate having a pixel transistor for each of sets of two or more of the photoelectric transducers as a constituent unit, the pixel transistor being shared by the set and formed on the second substrate, and a second wiring which is connected to a first wiring formed on the second substrate via one contact, and is connected to a plurality of first elements, the first wiring leading to a second element shared by a plurality of first elements among a plurality of elements formed on the first substrate, each of the plurality of first elements being formed for each of the photoelectric transducers are included.