A photoelectric conversion device has a pixel area including an effective pixel row and a reference pixel row, the reference pixel row containing a plurality of reference pixel pairs, each pair composed of a first reference pixel and a second reference pixel arranged adjacent to each other. The first and second reference pixels output reference signals having different signal levels and independent of the quantity of incident light.

A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.

The present application discloses an array substrate comprising a base substrate, a row of a plurality of pixel units, and a first gate line and a first common electrode line adjacent to the row of the plurality of pixel units and on a first side of the row of the plurality of pixel units in plan view of the array substrate. The first gate line and the first common electrode line are spaced apart by a gap; and a light shield at least partially covering the gap for reducing light leakage from the gap.

A method of manufacturing a photoelectric conversion element including a semiconductor layer includes: forming an electrode; forming an insulating layer covering the electrode; forming an opening in a region of the insulating layer overlapping the electrode in a plan view; forming a covering layer of a semiconductor material on a surface of the insulating layer; and forming the semiconductor layer by patterning the covering layer. In the forming of the semiconductor layer, the semiconductor layer is formed such that an outer circumferential edge of the semiconductor layer is located on the outside of an inner circumferential edge of the opening in the plan view.

The present technology relates to an imaging device, a manufacturing device, and a manufacturing method that enable a reliable manufacturing device to be manufactured without an increase in the number of manufacturing steps. A substrate on which an image sensor is mounted, a frame that fixes an infrared cut filter (IRCF), and a unit including a lens are included. The image sensor is sealed by the substrate, the IRCF, and the frame. A vent connected to a space in which the image sensor is sealed is provided in a part of the frame. The vent is blocked by a member that bonds the unit and the frame together. The vent is provided in the frame, in a predetermined shape, and in a vertical direction with respect to a surface to which the member is applied. The present technology can be applied to the imaging device.

Various embodiments are directed to an image sensor that includes a first sensor portion and a second sensor portion coupled to the first sensor portion. The second sensor portion may be positioned relative to the first sensor portion so that the second sensor portion may initially detect light entering the image sensor, and some of that light passes through the second sensor portion and is be detected by the first sensor portion. In some embodiments, the second sensor portion may be configured to have a thickness suitable for sensing visible light. The first sensor portion may be configured to have a thickness suitable for sensing IR or NIR light. As a result of the arrangement and structure of the second sensor portion and the first sensor portion, the image sensor captures substantially more light from the light source.

A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

An image capturing apparatus includes an image sensor having a plurality of pixels and being capable of outputting a plurality of image signals read out using different methods for individually reading out the signals of the plurality of pixels and correction signals for correcting the plurality of image signals, a processing unit for processing the correction signals so as to handle the reading methods for the plurality of image signals, and a correction unit for correcting the plurality of image signals using the correction signals processed by the processing unit.

A 4-color pixel image sensor having a visible color noise reduction function in a near infrared ray (NIR) pixel may include an active pixel region having a plurality of photodiodes, a plurality of first metal layers, a plurality of color filters, a first NIR pixel and a micro-lens, which are stacked, wherein the plurality of photodiodes are arranged in series and the plurality of color filters are formed to be adjacent to each other in series; an NIR optical black pixel region having a plurality of photodiodes and a second NIR pixel, which are stacked, wherein the plurality of photodiodes are arranged in series; and a visible optical black pixel region having a plurality of photodiodes, a second metal layer, a plurality of color filters and a micro-lens, which are stacked, wherein the plurality of photodiodes are arranged in series, and the plurality of color filters are formed to be adjacent to each other in series, wherein the active pixel region, the NIR optical black pixel region and the visible optical black pixel region are arranged on a same substrate in series.