An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.

A fingerprint sensor includes: a light sensing layer including a light sensing element; and an optical layer including a plurality of light transmitting areas, a light blocking area, a light transmitting member disposed in the plurality of light transmitting areas, a light blocking member disposed in the light blocking area, and a planarization member disposed on the light blocking member, wherein the light blocking area surrounds the plurality of light transmitting areas, wherein the light transmitting member includes a first organic material, wherein the light blocking member includes a second organic material, and wherein the planarization member includes a third organic material and a positive-type photosensitive material.

A photodetector device includes a photodetector array comprising an array of photodetectors and a plurality of metal structures arranged between photodetectors of the array of photodetectors, wherein the plurality of metal structures are arranged in a first pattern; and a transparent substrate comprising a plurality of diffusion structures being patterned according to a second pattern that matches the first pattern. Each diffusion structure of the plurality of diffusion structures is configured to redirect light that is incident thereon. Additionally, the transparent substrate and the photodetector array are coupled together such that the first pattern is aligned with the second pattern and the plurality of diffusion structures covers the plurality of metal structures.

An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.

The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

An apparatus includes a plurality of pixels arranged in a substrate including a first surface provided with a transistor and a second surface opposed to the first surface, and a light shielding portion. The plurality of pixels includes first pixels shielded from light, and second pixels. Each of the plurality of pixels includes a first area of a first conductive type. Each of the first pixels includes a second area. Each of the second pixels includes a third area between the second surface and the first area, and includes a fourth area of a second conductive type between the first area and the first surface. In a cross-section along a first line, an impurity concentration of the first conductive type in the second area is higher than an impurity concentration of the first conductive type in the third area.

There is provided a photodetection device capable of widening a dynamic range without increasing the number of photoelectric converters. The photodetection device according to an embodiment of the present disclosure includes a plurality of photoelectric converters arranged in one of pixels and configured to photoelectrically convert incident light. The plurality of photoelectric converters includes at least one first photoelectric converter and at least one second photoelectric converter having a lower sensitivity to the incident light than the first photoelectric converter.

[Problem] A technology is provided that is advantageous in effectively reducing PLS noise and suppressing obstruction of the flow of electrons in a photoelectric conversion portion.

[Means of Solution] The pixel separation portion is provided with a first light-shielding member that is disposed closer to the color filter than the charge transfer portion is. The first light-shielding member includes a first light-shielding portion that extends in a depth direction of the substrate, and a second light-shielding portion that extends in a width direction perpendicular to the depth direction and is disposed at a position that overlaps with the charge transfer portion of the first-type pixel when viewed from above in the depth direction. At least a part of a portion of the pixel separation portion facing the second light-shielding portion in the width direction is disposed at a position that does not overlap with the first-type color filter but overlaps with the second-type color filter when viewed from above in the depth direction.

A solid-state imaging device includes: a substrate including a first surface and a second surface that is opposed to the first surface; a first through-wiring that penetrates from the first surface of the substrate to the second surface of the substrate and through which electric charge is to be transferred; an electroconductive body formed in the substrate and along a periphery of a side surface of the first through-wiring with a dielectric body being interposed between the electroconductive body and the side surface; and a voltage supply circuit that supplies the electroconductive body with a voltage that causes a voltage difference between the first through-wiring and the electroconductive body to be small, when the electric charge is to be transferred to the first through-wiring.

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.