An image sensor includes a top layer including a first front bonding pad on a first substrate, a first front bonding plug connected to the first front bonding pad, and a first shield structure apart from the first front bonding pad in a first horizontal direction, a middle layer below the top layer and bonded to the top layer, the middle layer including a second front bonding pad on a second substrate, a second front bonding plug connected to the second front bonding pad, and a second shield structure apart from the second front bonding pad in the first horizontal direction, and a bottom layer below the middle layer and bonded to the middle layer, wherein a vertical level of a top surface of the first shield structure is higher than a vertical level of a top surface of the first front bonding pad.

BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

The present technology relates to a semiconductor device and electronic equipment in which a semiconductor device that suppresses the occurrence of noise by a leakage of light can be provided.

A semiconductor device is configured which includes a light-receiving element 34, an active element for signal processing, and a light shielding structure 40 which is between the light-receiving element 34 and the active element to cover the active element and is formed of wirings 45 and 46. The semiconductor device further includes a first substrate on which the light-receiving element is formed, a second substrate on which the active element is formed, and a wiring layer which has a light shielding structure by the wirings which is formed on the second substrate, and in which the second substrate can be bonded to the first substrate through the wiring layer.

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.