A solar cell including: substrate having front and back surfaces, the back surface includes first, second and gap regions, the first and second regions are staggered and spaced from each other in a first direction, and each gap region is provided between adjacent first and second regions, first pyramidal texture structure regions are formed corresponding to gap regions and distance between top and bottom thereof is 2-4 m; first conductive layer formed over the first region; second conductive layer formed over the second region, the second conductive layer has conductivity type opposite to the first conductive layer; first electrode forming electrical contact with the first conductive layer; second electrode forming electrical contact with the second conductive layer; and boundary region between the gap region and the first and/or second conductive layer adjacent thereto, and the boundary region includes strip or line patterned texture structures arranged at intervals.

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a string of solar cells includes a plurality of back-contact solar cells, wherein each of the plurality of back-contact solar cells includes P-type and N-type doped diffusion regions. A plurality of conductive wires is disposed over a back surface of each of the plurality of solar cells, wherein each of the plurality of conductive wires is substantially parallel to the P-type and N-type doped diffusion regions of each of the plurality of solar cells. One or more of the plurality of conductive wires adjoins a pair of adjacent solar cells of the plurality of solar cells and has a relief feature between the pair of adjacent solar cells.

A photovoltaic cell module includes a photovoltaic cell layer, conductive or non-conductive connection points between photovoltaic cells and interconnected busbars, a grid line bonding layer and a grid line supporting layer provided on surfaces of the photovoltaic cells. The grid line supporting layer adheres to the surfaces of the photovoltaic cells by a bonding effect of the grid line bonding layer. The grid line supporting layer is laminated on the interconnected busbars. A method of manufacturing the module includes: firstly, preliminarily fixing interconnected busbars on the surfaces of photovoltaic cells via conductive or non-conductive connection points; then covering the surfaces of the photovoltaic cells with a grid line supporting layer and a grid line bonding layer, applying pressure on the grid line supporting layer and the grid line bonding layer, and completely fixing the interconnected busbars to the surfaces of the photovoltaic cells by the grid line supporting layer.

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm.sup.3 to 2E+16 cm.sup.3, and a minority carrier lifetime of the silicon wafer is greater than or equal to 200 s.

A metal-semiconductor contact structure, a solar cell and a photovoltaic module are provided. The metal-semiconductor contact structure includes: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region provided at a contact interface between the doped semiconductor layer and the metal electrode, and including: a first conductive structure including a plurality of first metal particles distributed in the first conductive region, at least part of the first conductive structure contacting the doped semiconductor layer; and a second conductive structure, wherein the second conductive structure is radial, at least part of the second conductive structure is located on a surface of the first metal particles, and the second conductive structure has a radial direction towards the metal electrode; wherein the metal electrode, the first metal particles, and the second conductive structure all have a same metal element.

This disclosure provides back contact cell and solar cell module. The back contact cell comprises a semiconductor substrate, the semiconductor substrate is provided with a front surface and a back surface opposite to each other, the back surface includes a plurality of adjacent and alternately arranged segment units, a segment space is formed between segment unit and the backlight surface; the segment space further includes a first space, a second space, a third space and a fourth space; a first passivation layer, located only in the first space in each segment space; a first doped semiconductor layer, located only in the first space in each segment space, and being adjacent to a side of the first passivation layer away from the semiconductor substrate; a second passivation layer, located only in the second spacethe fourth space in each segment space; and a second doped semiconductor layer located only in the second spacethe fourth space in each segment space, and being adjacent to a side of the second passivation layer away from the semiconductor substrate.

This present application provides a back contact solar cell and solar cell module, comprising: a substrate, provided with a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a main-light-receiving surface of the cell, and the substrate back surface is close to a non-main-light-receiving surface of the cell; P-type polarity region, including a first doped semiconductor layer; N-type polarity region, including a second doped semiconductor layer, the N-type polarity region and the P-type polarity region are alternately located on side of the substrate back surface, wherein, a thickness of the second doped semiconductor layer along a normal direction of the cell is smaller than a thickness of the first doped semiconductor layer along the normal direction; and an isolation region, located between each two adjacent N-type polarity region and P-type polarity region. The back contact solar cell and solar cell module provided by this application can take into account the electrical and optical properties of the solar cell, further improving the short-circuit current, open-circuit voltage and photoelectric conversion efficiency of the solar cell.

A solar cell including: substrate having front and back surfaces, the back surface includes first, second and gap regions, the first and second regions are alternately arranged and spaced from each other in a first direction, and a respective gap region is provided between adjacent first and second regions, first pyramidal texture structure regions are formed corresponding to gap regions and distance between top and bottom thereof is 2-4 m; first conductive layer formed over the first region; second conductive layer formed over the second region, the second conductive layer has conductivity type opposite to the first conductive layer; first electrode forming electrical contact with the first conductive layer; second electrode forming electrical contact with the second conductive layer; and boundary region between the gap region and the first and/or second conductive layer adjacent thereto, and the boundary region includes strip or line patterned texture structures arranged at intervals.

The present disclosure relates to the technical field of solar cells. Disclosed are a back contact cell module and a system. The assembly includes a cell string, an insulation bar, and a bus bar; the cell string includes a first cell piece and a second cell piece, which are adjacent to each other; the insulation bar is provided on a backlight surface of the first cell piece; a second ribbon is connected to the second cell piece and the bus bar, respectively; and the insulation bar blocks the second ribbon and the first cell piece.

An image decoding device includes a quantization parameter deriving unit configured to correct a value of a decoded quantization parameter of a target block depending on whether or not adaptive color transform has been applied to the target block, and then set, as the quantization parameter of the target block, the larger of the corrected value of the quantization parameter and a predetermined value of 0 or more.