Embodiments of a hybrid imaging sensor and methods for pixel sub-column data read from the within a pixel array.

A sensor is disclosed that provides measurements in multiple degrees of freedom without significantly increasing size, complexity, or cost. The sensor can include a light component in support of a first light source operable to direct a first beam of light, and a second light source operable to direct a second beam of light. The sensor can also include an imaging device that can directly receive the first beam of light and the second beam of light and convert these into electric signals. The imaging device and the light component can be movable relative to one another. The sensor can further include a light location module and/or a position module configured to receive the electric signals and determine locations of the first beam of light, the second beam of light on the imaging device and a relative position of the imaging device and the light component.

An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.

A photon counting detector is provided for electrometric waves having a wide wavelength range, such as X-rays, gamma rays, and excited weak fluorescence, by use of a common detecting structure. The detector includes an optical connecting part opposed to an emission surface of a columnar-body array and can adjust a spreading range of light emitted from an emission end face of each of a plurality of columnar bodies. The detector also includes a group of APD (avalanche photodiode) clusters opposed to the emission surface via the optical connecting part. In the group of APD clusters, NN (N is a positive integer of 2 or more) APDs each having a light receiving face are arranged two-dimensionally and the output signals from the NN APDs are combined by a wired logical addition circuit so as to form an APD cluster serving as one pixel. A plurality of such clusters are arranged two-dimensionally.

An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first circuit includes a first photoelectric conversion element, a first transistor, and a second transistor; a second circuit includes a second photoelectric conversion element, a third transistor, and a fourth transistor; a third circuit includes a fifth transistor, a sixth transistor, a seventh transistor, and a second capacitor; the spectroscopic element is provided over the first photoelectric conversion element or the second photoelectric conversion element; and the first circuit and the second circuit is connected to the third circuit through a first capacitor.

A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

An image sensor is wieldy used in many fields, including medical field and security device. Specifically, the image sensor is most widely used in digital camera and mobile phone. The digital camera and the mobile phone requires capture image of higher resolution and higher quality. However, a preview size of the mobile phone or digital camera requires a small size because of a display limitation. Therefore, a function of reducing an image size or magnifying a specific portion of the picture is essential in the image sensor. Accordingly, there is provided an image sensor with a scaler. The image sensor with the scaler can arbitrarily adjust a size of an image without any additional scaling chip.

An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, and a charge overflow circuit. The charge storage region may be used to operate the image sensor array in global shutter mode. During high light level illumination, the charge overflow circuit may divert charge away from the photodiode such that only a predetermined portion of the accumulated charge remains in the photodiode. During low light level illumination all of the accumulated charge may be stored in the pixel photodiode. The charge overflow circuit may include a transistor and a resistor or capacitor. By implementing a charge overflow circuit, the size of the charge storage region may be reduced while still preserving the high dynamic range and low noise of the image sensor during all light illumination conditions.

There is provided an image capturing apparatus capable of controlling focus detecting pixels independently of the remaining image capturing pixels while maintaining the sensitivity of an image sensor and obtaining high image quality. The image capturing apparatus includes a first semiconductor chip, and a second semiconductor chip stacked on the first semiconductor chip. On the first semiconductor chip, the light receiving sections of a first pixel group and second pixel group, and a first pixel driving circuit configured to drive the pixels of the first pixel group are arranged. On the second semiconductor chip, a second pixel driving circuit configured to drive the pixels of the second pixel group is arranged.

A pixel including a photodiode having a first pole coupled through a transfer MOS transistor to a node for sensing charges of a first type stored in the photodiode, and having a second pole connected to a storage capacitor and to a circuit for reading charges of a second type sent to the storage capacitor.