An optical communication device, reception apparatus, transmission apparatus and transmission and reception system are disclosed. The optical communication device includes a drive circuit substrate. A first through via extends through the drive circuit substrate and is configured to electrically connect an optical element disposed on a first surface side of the drive circuit substrate to a drive circuit disposed on a second surface side of the drive circuit substrate. A positioning element is attached to an interposer substrate and is configured to align optical axes of a first lens that is attached to a lens substrate and that faces a second lens that is disposed on the first surface side of the drive circuit substrate. A second through via extends through the interposer substrate and electrically connects the drive circuit to a signal processing circuit disposed on a signal processing substrate positioned above the interposer substrate.

A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

A wafer level packaging structure for image sensors and a wafer level packaging method for image sensors are provided. The wafer level packaging structure includes: a wafer to be packaged including multiple chip regions and scribe line regions between the chip regions; pads and image sensing regions located on a first surface of the wafer and located in the chip regions; first dike structures covering surfaces of the pads and the scribe line regions; a packaging cover arranged facing the first surface of the wafer; and second dike structures located on a surface of the packaging cover. The second dike structures are arranged corresponding to the scribe line regions. The packaging cover and the wafer are jointed fixedly via the second dike structures and the first dike structures.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

The optical device includes a light sensor positioned on a base. The light sensor is configured to receive an input light signal and outputs a passed light signal that includes light from the input light signal. The optical device also includes a return system located on the base. The return system is configured to receive the passed light signal from the light sensor and to return at least a portion of the light from the passed light signal back to the light sensor.

A method for manufacturing an optical-assembly includes the steps of preparing an optical connector including a base having an optical waveguide and a first support block holding a first optical fiber, the base having first and second end surfaces; aligning the optical connector to the optical device, the first end surface of the base facing to the optical device, the first support block being fixed to the base in a removable manner; after aligning the optical connector, fixing the base to the optical device; after fixing the base, removing the first support block from the base; after removing the first support block, re-fixing a second support block to the base, the second end surface of the base facing to the second support block. The second support block has an optical fiber and a through hole. The base has a guide pin inserted to the through hole in the re-fixing step.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

Material and antireflection structure and methods of manufacturing are provided that produce efficient photovoltaic power conversion from thin film solar cells on flexible substrates. Step-graded antireflection structures are placed on the front of the device structure. Materials of different energy gap are combined in the depletion region of at least one of the semiconductor junctions within the thin film device structure. Conductive, low refractive index layers are deposited on the bottom of the thin film device structure to form an omni-directional back reflector contact.

A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e.sup.2 times the electric field intensity of the terahertz wave at the interface.

An electronic device can include a housing defining an aperture, and an electromagnetic radiation emitter and an electromagnetic radiation detector disposed in the housing. An optical component can be disposed in the aperture and can include a first region of a first material having a first index of refraction, the first region aligned with the electromagnetic radiation emitter, a second region of the first material, the second region aligned with the electromagnetic radiation detector, and a bulk region surrounding a periphery of the first region and a periphery of the second region, the bulk region including a second material having a second index of refraction that is lower than the first index of refraction.