A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

An image sensor includes: a substrate including a first side and a second side facing the first side; pixels including a photoelectric conversion layer in the substrate and a transistor on the first side of the substrate; and a pixel separating pattern between the pixels, wherein the pixel separating pattern includes a first separating pattern, a second separating pattern, and a third separating pattern, the second separating pattern is conductive, and the first separating pattern and the third separating pattern are non-conductive, the second separating pattern is nearer the first side of the substrate than is the third separating pattern, and a first end of the first separating pattern, a first end of the second separating pattern, and a first end of the third separating pattern are on the second side of the substrate.

A manufacturing method of a photoelectric conversion panel includes forming a short ring, forming a plurality of data lines connected to a TFT and the short ring, forming a first conductive portion of a bias line connected to the photodiode in an upper layer above the photodiode, electrically blocking the short ring and the TFT from each other by cutting the plurality of data lines after the forming of the first conductive portion, and forming an inorganic insulating film in a blocking portion created by the plurality of data lines being cut.

The present disclosure relates to a semiconductor device, a manufacturing method therefor, and an electronic apparatus by which film stress generated due to heat treatment can be reduced. The semiconductor device includes a through-via on which a connection electrical conductor is formed via an insulation film, the through-via being provided on a side wall of a through-hole formed in a semiconductor substrate, in which the connection electrical conductor includes a thin film portion with a smaller film thickness and a thick film portion with a larger film thickness. The present disclosure can be applied to, for example, a solid-state image pickup apparatus and the like.

Provided is a solid-state imaging device capable of further improving reliability of a solid-state imaging device and further reducing manufacturing cost. Provided is a solid-state imaging device including a second semiconductor substrate provided with a photoelectric conversion unit and a second element, a second insulating layer, a first semiconductor substrate provided with a first element, and a first insulating layer arranged in this order from a light incident side, and including a groove formed on the first semiconductor substrate, in which the groove has a first side wall and a second side wall, and a part of at least one side wall of the first side wall or the second side wall extends in an oblique direction with respect to a surface of the first semiconductor substrate on the light incident side.

According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, and a transparent member including a first surface and a second surface, where the second surface of the transparent member is coupled to the image sensor die via one or more dam members such that an empty space exists between an active area of the image sensor die and the second surface of the transparent member. The image sensor package includes a light blocking member coupled to or defined by the transparent member.

An optical detection module and a related manufacturing method are applied for chip scale package technology. The optical detection module includes a chip scale package assembly and a light sheltering layer. The chip scale package assembly includes a glass substrate, a detection chip, an isolation layer, a plurality of redistribution layers, and a plurality of conductive contacts. The detection chip is located above the glass substrate. The isolation layer is disposed on a surface of the detection chip opposite to the glass substrate. The plurality of redistribution layers is disposed on the isolation layer and spaced from each other, and having a plurality of conductive units. The plurality of conductive contacts is respectively disposed on the plurality of conductive units. The light sheltering layer is disposed on a lateral surface of the chip scale package assembly, and adapted to block light transmission and provide a covering protection function.

An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).

Embodiments of the present disclosure relate to a structure, which includes a plurality of photodiode doping regions formed in a substrate, and a deep trench isolation (DTI) structure formed in the substrate, wherein the DTI structure separates photodiode doping regions, and the DTI structure comprises a first filling material defining an air gap therein. The first filling material includes a top, a sidewall, and a bottom. The structure also includes a first isolation layer surrounding and in contact with the top, the sidewall, and the bottom of the first filling material.