A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.

A display device includes a pixel disposed in a display area. The pixel includes a first electrode; a first insulating layer disposed on the first electrode, and including openings, each of the openings exposing different areas of the first electrode and defining respective cells; light emitting elements disposed in the respective cells, each of the light emitting elements including a first end electrically connected to the first electrode; and a second end protruding upward from the first insulating layer; and a second electrode disposed on the light emitting elements, and electrically connected to the second ends of each of the light emitting elements.

A display device and a tiled display including the same are provided. The display device includes a bottom plate, and a display panel including an active area on the bottom plate and including a plurality of pixels, and a plurality of dummy areas near the active area and including a plurality of dummy pixels, wherein the plurality of dummy pixels is on at least one side surface of the bottom plate, wherein the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel configured to emit lights of different colors, and wherein the plurality of dummy pixels is configured to emit light of a same color as one of the first sub-pixel, the second sub-pixel, and the third sub-pixel.

A pixel includes a light emitting area including a central portion and an outer portion, a non-light emitting area surrounding the light emitting area, a first electrode and a second electrode that are spaced apart from each other in the light emitting area, and a first light emitting element disposed between the first electrode and the second electrode. The first electrode and the second electrode are spaced apart from each other at a first interval in the central portion, and are spaced apart from each other at a second interval in the outer portion. The second interval is larger than the first interval. An interval between the first electrode and the second electrode gradually increases from the central portion to the outer portion.

An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.

A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.