An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a controller. The power bus accepts a variable number of Segmented LEDs. The controller receives AC power and provides a power signal on the power bus. Each Segmented LED is characterized by a driving voltage that is greater than 3 times the driving voltage of a conventional LED fabricated in the same material system as the Segmented LED. The number of Segmented LEDs in the light source is chosen to compensate for variations in the light output of individual Segmented LEDs introduced by the manufacturing process. In another aspect of the invention, the number of Segmented LEDs connected to the power bus can be altered after the light source is assembled.

A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.

A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.

A light-emitting element, in which a light whose emission angle distribution is one of Lambert's emission law or uniform Isotropic emission, is extracted from a light extraction opening window, and an in-plane distribution of a light intensity on a light extraction surface of the light extraction opening window is uniform, and which can be used as a reference light source when measuring an absolute light quantity of a weak light emitted from a luminous body which is a measurement object.

A metal-doped quantum dot is provided. By doping metal in the intrinsic quantum dot, the quantum dot has fluorescent stability and may not be quenched at high temperature. Meanwhile, the metal-doped quantum dot is used to prepare red, green and blue quantum dot dielectric layers, and the red, green and blue quantum dot dielectric layers are packaged in a LED device to mix the red, green and blue light to obtain a white light. In addition, the above LED device can be used to prepare a LED bar with simple structure which is adapt for a side-incident backlight module and good for designing ultra-thin and narrow bezel product.

A light emitter, comprising a monolithic n-type layer (comprising at least first and second n-type regions), a monolithic p-type layer (comprising at least first and second p-type regions), at least a first isolation region and at least a first electrically conductive via that extends through at least part of the first isolation region. At least part of the first isolation region is between the first n-type region and the second n-type region, and/or least part of the first isolation region is between the first p-type region and the second p-type region.

A high-voltage flip LED chip and a manufacturing method thereof. In the high-voltage flip LED chip, a P-N electrode connecting metal block is filled into an isolation trench between two adjacent chip units and is respectively filled into a first electrode hole of one chip unit and a second electrode hole of the other chip unit to serially connect the two adjacent chips. Since the chip units are interconnected by adopting large-area metal and the metal is filled into the isolation trench, not only can the high luminous efficiency of the chip be guaranteed, but also the high reliability and excellent current spreading between the units are guaranteed, the process stability can be improved, and the rate of non-defective products and the product reliability are improved; since the isolation trenches between the chip units adopt an ODR design, the reflectivity of reflectors at the trenches can be improved and the absorption by electrodes is reduced; and since the chip has large-area spacing-controllable P and N electrodes, the heat dissipating capability of the chip is guaranteed to be good and simultaneously the packaging difficulty is reduced.