An array substrate for a liquid crystal display device includes a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes that are on and contact the semiconductor layer; and an oxide layer that corresponds to the semiconductor layer and is on the gate electrode.

The present disclosure provides an array substrate and a method of manufacturing the same, and a display panel comprising the array substrate, for reducing a drop or height difference between surfaces of portions of a passivation layer located on either side of a source/drain electrode lead wire and a surface of a portion of passivation layer located on an upper surface of the source/drain electrode lead wire so as to increase an aperture ratio of the display panel. The method comprises: forming a source/drain electrode lead wire and a passivation layer successively on a base substrate, the passivation layer at least covering the source/drain electrode lead wire; and thinning a portion of the passivation layer located on the source/drain electrode lead wire such that a surface of the portion is higher than those of other portions of the passivation layer, at the time of patterning the passivation layer to form a via hole therein.

A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.

Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.

A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

A semiconductor device includes a lower wiring layer formed on a substrate; a lower insulating layer formed on the lower wiring layer; an upper wiring layer formed on the lower insulating layer, the upper wiring layer intersecting with the lower wiring layer across the lower insulating layer to form a wiring cross portion; and an island-shaped upper insulating layer formed on the lower insulating layer so as to be in contact with the upper wiring layer, wherein the upper wiring layer includes a first portion formed on the upper face of the lower insulating layer and a second portion disposed on the wiring cross portion and formed on a side wall of the upper insulating layer, and wherein the upper wiring layer is not formed on the upper face of the upper insulating layer at the wiring cross portion.

A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.